Excitability of a semiconductor laser by a two-mode homoclinic bifurcation

We report on the preparation of optical excitability in a distributed feedback semiconductor laser. The device integrates a single-mode laser and a 250 microm long passive section with cleaved facet. The phase of the light fed back from the passive section is tunable by current. The theoretical analysis shows an ultimate hop between external cavity modes within every phase cycle that is associated with a two-mode homoclinic bifurcation close to which the system becomes excitable. This excitability is clearly demonstrated in the experimental response to optical injection comparing well with simulation calculations.