Novel germanium-based magnetic semiconductors

Novel germanium-based magnetic semiconductors

Epitaxial synthesis and properties of novel Co and Mn-doped Ge magnetic semiconductors were studied. Epitaxial growth of high quality films with high doping concentrations has been stabilized by the use of two dopants. The magnetic and transport properties of the system exhibit high T(C) and large m...

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Veröffentlicht in:Phys. Rev. Lett 2003-10, Vol.91 (17), p.177203-177203, Article 177203
Hauptverfasser: Tsui, F, He, L, Ma, L, Tkachuk, A, Chu, Y S, Nakajima, K, Chikyow, T
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Sprache:eng
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ADVANCED PHOTON SOURCE
FABRICATION
GERMANIUM ALLOYS
MAGNETIC SEMICONDUCTORS
MATERIALS SCIENCE
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container_issue 17
container_start_page 177203
container_title Phys. Rev. Lett
container_volume 91
creator Tsui, F
He, L
Ma, L
Tkachuk, A
Chu, Y S
Nakajima, K
Chikyow, T
description Epitaxial synthesis and properties of novel Co and Mn-doped Ge magnetic semiconductors were studied. Epitaxial growth of high quality films with high doping concentrations has been stabilized by the use of two dopants. The magnetic and transport properties of the system exhibit high T(C) and large magnetoresistance effects that can be controlled systematically by the doping concentration. The maximum T(C) achieved in the semiconducting materials is approximately 270 K at a composition of Co0.12Mn0.03Ge0.85.
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subjects ADVANCED PHOTON SOURCE
FABRICATION
GERMANIUM ALLOYS
MAGNETIC SEMICONDUCTORS
MATERIALS SCIENCE
title Novel germanium-based magnetic semiconductors
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