Novel germanium-based magnetic semiconductors

Epitaxial synthesis and properties of novel Co and Mn-doped Ge magnetic semiconductors were studied. Epitaxial growth of high quality films with high doping concentrations has been stabilized by the use of two dopants. The magnetic and transport properties of the system exhibit high T(C) and large m...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Phys. Rev. Lett 2003-10, Vol.91 (17), p.177203-177203, Article 177203
Hauptverfasser:	Tsui, F, He, L, Ma, L, Tkachuk, A, Chu, Y S, Nakajima, K, Chikyow, T
Format:	Artikel
Sprache:	eng
Schlagworte:	ADVANCED PHOTON SOURCE FABRICATION GERMANIUM ALLOYS MAGNETIC SEMICONDUCTORS MATERIALS SCIENCE
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Epitaxial synthesis and properties of novel Co and Mn-doped Ge magnetic semiconductors were studied. Epitaxial growth of high quality films with high doping concentrations has been stabilized by the use of two dopants. The magnetic and transport properties of the system exhibit high T(C) and large magnetoresistance effects that can be controlled systematically by the doping concentration. The maximum T(C) achieved in the semiconducting materials is approximately 270 K at a composition of Co0.12Mn0.03Ge0.85.
ISSN:	0031-9007 1079-7114
DOI:	10.1103/physrevlett.91.177203