Prophylactic fluconazole promotes reepithelialization in full-face carbon dioxide laser skin resurfacing
Background and Objective Laser skin resurfacing is used to treat photodamaged skin, rhytids, and acne scarring. Many patients are placed on antibiotics and antivirals pre‐ and postoperatively. The purpose of this study was to determine whether prophylactic fluconazole increased the rate of reepithel...
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Veröffentlicht in: | Lasers in surgery and medicine 2000, Vol.26 (2), p.201-207 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Background and Objective
Laser skin resurfacing is used to treat photodamaged skin, rhytids, and acne scarring. Many patients are placed on antibiotics and antivirals pre‐ and postoperatively. The purpose of this study was to determine whether prophylactic fluconazole increased the rate of reepithelialization in patients undergoing full‐face CO2 laser skin resurfacing.
Study Design/Materials and Methods
Ninety‐one patients underwent full‐face CO2 laser skin resurfacing with the Coherent Ultrapulse 5000C. At least two passes of 300 mJ, density 5, were used except periocularly. Study group I consisted of 48 consecutive patients who received either cephalexin or ciprofloxacin for 7 days postoperatively. Study group II consisted of 43 patients who received 300 mg of fluconazole on postoperative days 3–8, in addition to ciprofloxacin. Both groups received acyclovir 400 mg t.i.d. pre‐ and postoperatively.
Results
Time to complete reepithelialization was compared between the groups by t‐test. Group II reepithelialized significantly faster than group I (7.65 ± 1.20 days vs. 10.27 ± 2.94 days; P < 0.0001). Ninety‐five percent of patients receiving fluconazole (group II) healed completely by day 9 versus only 53% of patients in group I.
Conclusion
Fluconazole administered postoperatively between days 3 and 8 significantly promotes reepithelialization in patients undergoing full‐face CO2 laser skin resurfacing. Lasers Surg. Med. 26:201–207, 2000. © 2000 Wiley‐Liss, Inc. |
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ISSN: | 0196-8092 1096-9101 |
DOI: | 10.1002/(SICI)1096-9101(2000)26:2<201::AID-LSM11>3.0.CO;2-0 |