Ultrafast laser-induced phase transitions in amorphous GeSb films

Time-resolved measurements of the spectral dielectric function reveal new information about ultrafast phase transitions induced by femtosecond laser pulses in Sb-rich amorphous GeSb films. The excitation generates a nonthermal phase within 200 fs. The dielectric function of this phase differs from t...

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Veröffentlicht in:Physical review letters 2001-04, Vol.86 (16), p.3650-3653
Hauptverfasser: Callan, J P, Kim, A M, Roeser, C A, Mazur, E, Solis, J, Siegel, J, Afonso, C N, de Sande, J C
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Sprache:eng
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Zusammenfassung:Time-resolved measurements of the spectral dielectric function reveal new information about ultrafast phase transitions induced by femtosecond laser pulses in Sb-rich amorphous GeSb films. The excitation generates a nonthermal phase within 200 fs. The dielectric function of this phase differs from that of the crystalline phase, contrary to previous suggestions of a disorder-to-order transition. The observed dielectric function is close to that of the liquid phase, indicating an ultrafast transition from the amorphous phase to a different disordered state.
ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.86.3650