Ice nucleation on hydrophilic silicon

We have used Fourier transform infrared spectroscopy to study thin water films on a hydrophilic silicon surface in the temperature range from 20 to − 20 ° C . Throughout that range, the spectra of the water adjacent to the silicon surface are consistent with that of bulk water near 25 ° C . Thicker...

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Veröffentlicht in:The Journal of chemical physics 2008-04, Vol.128 (13), p.134701-134701-5
Hauptverfasser: Ochshorn, Eli, Cantrell, Will
Format: Artikel
Sprache:eng
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Zusammenfassung:We have used Fourier transform infrared spectroscopy to study thin water films on a hydrophilic silicon surface in the temperature range from 20 to − 20 ° C . Throughout that range, the spectra of the water adjacent to the silicon surface are consistent with that of bulk water near 25 ° C . Thicker films ( > 1 μ m ) freeze at − 11 ± 1 ° C . We reconcile the apparent paradox of a thin film of water which is quite liquidlike at a temperature where freezing of thicker films occurs by hypothesizing that the nucleation event in the thicker film is triggered by a critical ice embryo which forms at some small distance from the silicon surface, as opposed to in direct contact with it.
ISSN:0021-9606
1089-7690
DOI:10.1063/1.2884351