Highly Infrared Reflective Behavior of Transparent Conductive ZnO:Ga Films Synthesized by DC Reactive Magnetron Sputtering

Highly transparent, conductive, and IR‐reflective gallium‐doped ZnO films are deposited on a glass substrate by DC reactive magnetron sputtering. The films exhibit low transmittivity and high reflectivity in the near‐IR region (see figure) making them potential candidates in a wide range of applicat...

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Veröffentlicht in:	Chemphyschem 2008-03, Vol.9 (4), p.529-532
Hauptverfasser:	Ma, Quan-Bao, Ye, Zhi-Zhen, He, Hai-Ping, Luo, Yong, Zhu, Li-Ping, Huang, Jing-Yun, Zhang, Yin-Zhu, Zhao, Bing-Hui
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electric Conductivity electrooptical properties Exact sciences and technology gallium Gallium - chemistry Ii-vi semiconductors Magnetics - instrumentation Membranes, Artificial Microscopy, Electron, Scanning - methods Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics semiconductors Spectrophotometry - methods thin films X-Ray Diffraction zinc oxide Zinc Oxide - chemistry
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Beschreibung
Zusammenfassung:	Highly transparent, conductive, and IR‐reflective gallium‐doped ZnO films are deposited on a glass substrate by DC reactive magnetron sputtering. The films exhibit low transmittivity and high reflectivity in the near‐IR region (see figure) making them potential candidates in a wide range of applications.
ISSN:	1439-4235 1439-7641
DOI:	10.1002/cphc.200700604