The Chemical Vapor Deposition of Nickel Phosphide or Selenide Thin Films from a Single Precursor

The Chemical Vapor Deposition of Nickel Phosphide or Selenide Thin Films from a Single Precursor

Nickel phosphide, nickel selenide thin films and their heterostructure (Ni0.85Se/Ni2P) were deposited from a newly synthesized single source precursor {Ni[ i Pr2P(S)NP(Se) i Pr2]2} just by altering the deposition temperature using CVD.

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Veröffentlicht in:Journal of the American Chemical Society 2008-02, Vol.130 (8), p.2420-2421
Hauptverfasser: Panneerselvam, Arunkumar, Malik, Mohammad. A, Afzaal, Mohammad, O'Brien, Paul, Helliwell, Madeleine
Format: Artikel
Sprache:eng
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Zusammenfassung:Nickel phosphide, nickel selenide thin films and their heterostructure (Ni0.85Se/Ni2P) were deposited from a newly synthesized single source precursor {Ni[ i Pr2P(S)NP(Se) i Pr2]2} just by altering the deposition temperature using CVD.
ISSN:0002-7863
1520-5126
DOI:10.1021/ja078202j