High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0 microm

High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0 microm

We report a high-power (AlGaIn)(AsSb) semiconductor disk laser emitting around 2 microm. With a diamond heat spreader used for thermal management, a maximum output power of just over 5 W and slope efficiencies of over 25% were demonstrated. The output wavelength was tunable over an 80 nm range cente...

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Veröffentlicht in:Optics letters 2008-01, Vol.33 (2), p.201-203
Hauptverfasser: Hopkins, J-M, Hempler, N, Rösener, B, Schulz, N, Rattunde, M, Manz, C, Köhler, K, Wagner, J, Burns, D
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Sprache:eng
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Zusammenfassung:We report a high-power (AlGaIn)(AsSb) semiconductor disk laser emitting around 2 microm. With a diamond heat spreader used for thermal management, a maximum output power of just over 5 W and slope efficiencies of over 25% were demonstrated. The output wavelength was tunable over an 80 nm range centered at 1.98 microm. The beam propagation parameter (M2) was measured to be in the range of 1.1 to 1.4 for output powers up to 3 W.
ISSN:0146-9592