Domain sensitive contrast in photoelectron emission microscopy

Domain sensitive contrast in photoelectron emission microscopy

We have investigated the adsorption of cesium on the Si(100) surface with photoelectron emission microscopy using linearly polarized green laser light. We observe a polarization dependent contrast between the (2 x 1) or (1 x 2) reconstructed terraces. Density-functional calculations reveal the geome...

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Veröffentlicht in:Physical review letters 2007-11, Vol.99 (19), p.196102-196102, Article 196102
Hauptverfasser: Thien, D, Kury, P, Horn-von Hoegen, M, Meyer Zu Heringdorf, F-J, van Heys, J, Lindenblatt, M, Pehlke, E
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container_end_page 196102
container_issue 19
container_start_page 196102
container_title Physical review letters
container_volume 99
creator Thien, D
Kury, P
Horn-von Hoegen, M
Meyer Zu Heringdorf, F-J
van Heys, J
Lindenblatt, M
Pehlke, E
description We have investigated the adsorption of cesium on the Si(100) surface with photoelectron emission microscopy using linearly polarized green laser light. We observe a polarization dependent contrast between the (2 x 1) or (1 x 2) reconstructed terraces. Density-functional calculations reveal the geometric and electronic structure of the Cs/Si(100) surface. The contrast between the (2 x 1) or (1 x 2) reconstructed domains is explained on the basis of dipole selection rules for the photoemission matrix elements.
doi_str_mv 10.1103/physrevlett.99.196102
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title Domain sensitive contrast in photoelectron emission microscopy
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