Domain sensitive contrast in photoelectron emission microscopy
We have investigated the adsorption of cesium on the Si(100) surface with photoelectron emission microscopy using linearly polarized green laser light. We observe a polarization dependent contrast between the (2 x 1) or (1 x 2) reconstructed terraces. Density-functional calculations reveal the geome...
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Veröffentlicht in: | Physical review letters 2007-11, Vol.99 (19), p.196102-196102, Article 196102 |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | We have investigated the adsorption of cesium on the Si(100) surface with photoelectron emission microscopy using linearly polarized green laser light. We observe a polarization dependent contrast between the (2 x 1) or (1 x 2) reconstructed terraces. Density-functional calculations reveal the geometric and electronic structure of the Cs/Si(100) surface. The contrast between the (2 x 1) or (1 x 2) reconstructed domains is explained on the basis of dipole selection rules for the photoemission matrix elements. |
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ISSN: | 0031-9007 1079-7114 |
DOI: | 10.1103/physrevlett.99.196102 |