Biased surface fluctuations due to current stress

Direct correlation between temporal structural fluctuations and electron wind force is demonstrated, for the first time, by STM imaging and analysis of atomically resolved motion on a thin film surface under large applied current (10(5) A/cm2). The magnitude of the momentum transfer between current carriers and the geometrically constrained atoms in the fluctuating structure is at least 5x to 15x (+/-1sigma range) larger than for freely diffusing adatoms. Corresponding changes in surface resistivity will contribute significant fluctuation signature to nanoscale electronic properties.