Metal-Particle-Induced, Highly Localized Site-Specific Etching of Si and Formation of Single-Crystalline Si Nanowires in Aqueous Fluoride Solution

A straightforward metal‐particle‐induced, highly localized site‐specific corrosion‐like mechanism was proposed for the formation of aligned silicon‐nanowire arrays on silicon in aqueous HF/AgNO3 solution on the basis of convincing experimental results. The etching process features weak dependence on the doping of the silicon wafers and, thus, provides an efficient method to prepare silicon nanowires with desirable doping characteristics. The novel electrochemical properties between silicon and active noble metals should be useful for preparing novel silicon nanostructures and also new optoelectronic devices. Wires on wafers: A straightforward metal‐particle‐induced, highly localized site‐specific corrosion‐like mechanism was proposed for the formation of aligned silicon‐nanowire arrays on silicon in aqueous HF/AgNO3 solution, as shown here. The etching process features weak dependence on the doping of the silicon wafers and, thus, provides an efficient method to prepare silicon nanowires with desirable doping characteristics.