Coherent spin transport through a 350 micron thick silicon wafer

We use all-electrical methods to inject, transport, and detect spin-polarized electrons vertically through a 350-micron-thick undoped single-crystal silicon wafer. Spin precession measurements in a perpendicular magnetic field at different accelerating electric fields reveal high spin coherence with...

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Veröffentlicht in:Physical review letters 2007-10, Vol.99 (17), p.177209-177209, Article 177209
Hauptverfasser: Huang, Biqin, Monsma, Douwe J, Appelbaum, Ian
Format: Artikel
Sprache:eng
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Zusammenfassung:We use all-electrical methods to inject, transport, and detect spin-polarized electrons vertically through a 350-micron-thick undoped single-crystal silicon wafer. Spin precession measurements in a perpendicular magnetic field at different accelerating electric fields reveal high spin coherence with at least 13pi precession angles. The magnetic-field spacing of precession extrema are used to determine the injector-to-detector electron transit time. These transit time values are associated with output magnetocurrent changes (from in-plane spin-valve measurements), which are proportional to final spin polarization. Fitting the results to a simple exponential spin-decay model yields a conduction electron spin lifetime (T1) lower bound in silicon of over 500 ns at 60 K.
ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.99.177209