Photoluminescence of oxygen-containing surface defects in germanium oxides: A theoretical study

Photoabsorption and photoluminescence properties of nonbridging oxygen - O - Ge  ( N B O ) , - O O - Ge  (peroxy radical), O  Ge  , and ( O 2 ) Ge  defects in germanium oxides have been investigated by high-level ab initio calculations. Geometry optimization for excited electronic states of model clusters simulating these defects was carried out at the complete-active-space self-consistent-field level, and relative energies were calculated by various methods including time-dependent density-functional theory, outer-valence Green's functions, equation-of-motion coupled cluster theory with single and double excitations, symmetry-adapted cluster configuration interaction, multireference second-order perturbation theory, and multireference configuration interaction. The results demonstrate that the considered excited states of the aforementioned defects normally exhibit large Stokes shifts and that, with few exceptions, UV photoabsorption is accompanied by red or IR photoluminescence.