Grafting Cavitands on the Si(100) Surface
Cavitand molecules having double bond terminated alkyl chains and different bridging groups at the upper rim have been grafted on H-terminated Si(100) surface via photochemical hydrosilylation of the double bonds. Pure and mixed monolayers have been obtained from mesitylene solutions of either pure...
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Veröffentlicht in: | Langmuir 2006-12, Vol.22 (26), p.11126-11133 |
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creator | Condorelli, Guglielmo G Motta, Alessandro Favazza, Maria Fragalà, Ignazio L Busi, Marco Menozzi, Edoardo Dalcanale, Enrico Cristofolini, Luigi |
description | Cavitand molecules having double bond terminated alkyl chains and different bridging groups at the upper rim have been grafted on H-terminated Si(100) surface via photochemical hydrosilylation of the double bonds. Pure and mixed monolayers have been obtained from mesitylene solutions of either pure cavitand or cavitand/1-octene mixtures. Angle resolved high-resolution X-ray photoelectron spectroscopy has been used as the main tool for the monolayer characterization. The cavitand decorated surface consists of Si−C bonded layers with the upper rim at the top of the layer. Grafting of pure cavitands leads to not-well-packed layers, which are not able to efficiently passivate the Si(100) surface. By contrast, monolayers obtained from cavitand/1-octene mixtures consist of well-packed layers since they prevent silicon oxidation after aging. AFM measurements showed that these monolayers have a structured topography, with objects protruding from the Si(100) surface with average heights compatible with the expected ones for cavitand molecules. |
doi_str_mv | 10.1021/la060682p |
format | Article |
fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_68237168</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>68237168</sourcerecordid><originalsourceid>FETCH-LOGICAL-a381t-797d635b3e640c9f9cc525fb9a7ec982d1c11a18e7d25217e3c138fa1343b0883</originalsourceid><addsrcrecordid>eNpt0D1PwzAQBmALgWj5GPgDKAuIDgGfHcf2iAoFRCWQWlitq-NAIE2KnSD496Rq1S5MN9yjV3cvISdAL4EyuCqRpjRVbLFD-iAYjYVicpf0qUx4LJOU98hBCB-UUs0TvU96IEEkQvM-Gdx5zJuieouG-F00WGUhqquoeXfRpLgASgfRpPU5WndE9nIsgztez0PyMrqdDu_j8dPdw_B6HCNX0MRSyyzlYsZdmlCrc22tYCKfaZTOasUysAAIysmMCQbScQtc5Qg84TOqFD8k56vcha-_WhcaMy-CdWWJlavbYLo_uYR0CQcraH0dgne5Wfhijv7XADXLXsyml86erkPb2dxlW7kuogNna4DBYpl7rGwRtk5xwRJGOxevXBEa97PZo_80qeRSmOnzxAid3ig9ejWP21y0wXzUra-67v458A_sjoGu</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>68237168</pqid></control><display><type>article</type><title>Grafting Cavitands on the Si(100) Surface</title><source>American Chemical Society Journals</source><creator>Condorelli, Guglielmo G ; Motta, Alessandro ; Favazza, Maria ; Fragalà, Ignazio L ; Busi, Marco ; Menozzi, Edoardo ; Dalcanale, Enrico ; Cristofolini, Luigi</creator><creatorcontrib>Condorelli, Guglielmo G ; Motta, Alessandro ; Favazza, Maria ; Fragalà, Ignazio L ; Busi, Marco ; Menozzi, Edoardo ; Dalcanale, Enrico ; Cristofolini, Luigi</creatorcontrib><description>Cavitand molecules having double bond terminated alkyl chains and different bridging groups at the upper rim have been grafted on H-terminated Si(100) surface via photochemical hydrosilylation of the double bonds. Pure and mixed monolayers have been obtained from mesitylene solutions of either pure cavitand or cavitand/1-octene mixtures. Angle resolved high-resolution X-ray photoelectron spectroscopy has been used as the main tool for the monolayer characterization. The cavitand decorated surface consists of Si−C bonded layers with the upper rim at the top of the layer. Grafting of pure cavitands leads to not-well-packed layers, which are not able to efficiently passivate the Si(100) surface. By contrast, monolayers obtained from cavitand/1-octene mixtures consist of well-packed layers since they prevent silicon oxidation after aging. AFM measurements showed that these monolayers have a structured topography, with objects protruding from the Si(100) surface with average heights compatible with the expected ones for cavitand molecules.</description><identifier>ISSN: 0743-7463</identifier><identifier>EISSN: 1520-5827</identifier><identifier>DOI: 10.1021/la060682p</identifier><identifier>PMID: 17154593</identifier><identifier>CODEN: LANGD5</identifier><language>eng</language><publisher>Washington, DC: American Chemical Society</publisher><subject>Chemistry ; Exact sciences and technology ; General and physical chemistry</subject><ispartof>Langmuir, 2006-12, Vol.22 (26), p.11126-11133</ispartof><rights>Copyright © 2006 American Chemical Society</rights><rights>2007 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a381t-797d635b3e640c9f9cc525fb9a7ec982d1c11a18e7d25217e3c138fa1343b0883</citedby><cites>FETCH-LOGICAL-a381t-797d635b3e640c9f9cc525fb9a7ec982d1c11a18e7d25217e3c138fa1343b0883</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/la060682p$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/la060682p$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,776,780,2752,27053,27901,27902,56713,56763</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=18352420$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/17154593$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Condorelli, Guglielmo G</creatorcontrib><creatorcontrib>Motta, Alessandro</creatorcontrib><creatorcontrib>Favazza, Maria</creatorcontrib><creatorcontrib>Fragalà, Ignazio L</creatorcontrib><creatorcontrib>Busi, Marco</creatorcontrib><creatorcontrib>Menozzi, Edoardo</creatorcontrib><creatorcontrib>Dalcanale, Enrico</creatorcontrib><creatorcontrib>Cristofolini, Luigi</creatorcontrib><title>Grafting Cavitands on the Si(100) Surface</title><title>Langmuir</title><addtitle>Langmuir</addtitle><description>Cavitand molecules having double bond terminated alkyl chains and different bridging groups at the upper rim have been grafted on H-terminated Si(100) surface via photochemical hydrosilylation of the double bonds. Pure and mixed monolayers have been obtained from mesitylene solutions of either pure cavitand or cavitand/1-octene mixtures. Angle resolved high-resolution X-ray photoelectron spectroscopy has been used as the main tool for the monolayer characterization. The cavitand decorated surface consists of Si−C bonded layers with the upper rim at the top of the layer. Grafting of pure cavitands leads to not-well-packed layers, which are not able to efficiently passivate the Si(100) surface. By contrast, monolayers obtained from cavitand/1-octene mixtures consist of well-packed layers since they prevent silicon oxidation after aging. AFM measurements showed that these monolayers have a structured topography, with objects protruding from the Si(100) surface with average heights compatible with the expected ones for cavitand molecules.</description><subject>Chemistry</subject><subject>Exact sciences and technology</subject><subject>General and physical chemistry</subject><issn>0743-7463</issn><issn>1520-5827</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNpt0D1PwzAQBmALgWj5GPgDKAuIDgGfHcf2iAoFRCWQWlitq-NAIE2KnSD496Rq1S5MN9yjV3cvISdAL4EyuCqRpjRVbLFD-iAYjYVicpf0qUx4LJOU98hBCB-UUs0TvU96IEEkQvM-Gdx5zJuieouG-F00WGUhqquoeXfRpLgASgfRpPU5WndE9nIsgztez0PyMrqdDu_j8dPdw_B6HCNX0MRSyyzlYsZdmlCrc22tYCKfaZTOasUysAAIysmMCQbScQtc5Qg84TOqFD8k56vcha-_WhcaMy-CdWWJlavbYLo_uYR0CQcraH0dgne5Wfhijv7XADXLXsyml86erkPb2dxlW7kuogNna4DBYpl7rGwRtk5xwRJGOxevXBEa97PZo_80qeRSmOnzxAid3ig9ejWP21y0wXzUra-67v458A_sjoGu</recordid><startdate>20061219</startdate><enddate>20061219</enddate><creator>Condorelli, Guglielmo G</creator><creator>Motta, Alessandro</creator><creator>Favazza, Maria</creator><creator>Fragalà, Ignazio L</creator><creator>Busi, Marco</creator><creator>Menozzi, Edoardo</creator><creator>Dalcanale, Enrico</creator><creator>Cristofolini, Luigi</creator><general>American Chemical Society</general><scope>BSCLL</scope><scope>IQODW</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope></search><sort><creationdate>20061219</creationdate><title>Grafting Cavitands on the Si(100) Surface</title><author>Condorelli, Guglielmo G ; Motta, Alessandro ; Favazza, Maria ; Fragalà, Ignazio L ; Busi, Marco ; Menozzi, Edoardo ; Dalcanale, Enrico ; Cristofolini, Luigi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a381t-797d635b3e640c9f9cc525fb9a7ec982d1c11a18e7d25217e3c138fa1343b0883</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Chemistry</topic><topic>Exact sciences and technology</topic><topic>General and physical chemistry</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Condorelli, Guglielmo G</creatorcontrib><creatorcontrib>Motta, Alessandro</creatorcontrib><creatorcontrib>Favazza, Maria</creatorcontrib><creatorcontrib>Fragalà, Ignazio L</creatorcontrib><creatorcontrib>Busi, Marco</creatorcontrib><creatorcontrib>Menozzi, Edoardo</creatorcontrib><creatorcontrib>Dalcanale, Enrico</creatorcontrib><creatorcontrib>Cristofolini, Luigi</creatorcontrib><collection>Istex</collection><collection>Pascal-Francis</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>Langmuir</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Condorelli, Guglielmo G</au><au>Motta, Alessandro</au><au>Favazza, Maria</au><au>Fragalà, Ignazio L</au><au>Busi, Marco</au><au>Menozzi, Edoardo</au><au>Dalcanale, Enrico</au><au>Cristofolini, Luigi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Grafting Cavitands on the Si(100) Surface</atitle><jtitle>Langmuir</jtitle><addtitle>Langmuir</addtitle><date>2006-12-19</date><risdate>2006</risdate><volume>22</volume><issue>26</issue><spage>11126</spage><epage>11133</epage><pages>11126-11133</pages><issn>0743-7463</issn><eissn>1520-5827</eissn><coden>LANGD5</coden><abstract>Cavitand molecules having double bond terminated alkyl chains and different bridging groups at the upper rim have been grafted on H-terminated Si(100) surface via photochemical hydrosilylation of the double bonds. Pure and mixed monolayers have been obtained from mesitylene solutions of either pure cavitand or cavitand/1-octene mixtures. Angle resolved high-resolution X-ray photoelectron spectroscopy has been used as the main tool for the monolayer characterization. The cavitand decorated surface consists of Si−C bonded layers with the upper rim at the top of the layer. Grafting of pure cavitands leads to not-well-packed layers, which are not able to efficiently passivate the Si(100) surface. By contrast, monolayers obtained from cavitand/1-octene mixtures consist of well-packed layers since they prevent silicon oxidation after aging. AFM measurements showed that these monolayers have a structured topography, with objects protruding from the Si(100) surface with average heights compatible with the expected ones for cavitand molecules.</abstract><cop>Washington, DC</cop><pub>American Chemical Society</pub><pmid>17154593</pmid><doi>10.1021/la060682p</doi><tpages>8</tpages></addata></record> |
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title | Grafting Cavitands on the Si(100) Surface |
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