Grafting Cavitands on the Si(100) Surface

Cavitand molecules having double bond terminated alkyl chains and different bridging groups at the upper rim have been grafted on H-terminated Si(100) surface via photochemical hydrosilylation of the double bonds. Pure and mixed monolayers have been obtained from mesitylene solutions of either pure...

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Veröffentlicht in:Langmuir 2006-12, Vol.22 (26), p.11126-11133
Hauptverfasser: Condorelli, Guglielmo G, Motta, Alessandro, Favazza, Maria, Fragalà, Ignazio L, Busi, Marco, Menozzi, Edoardo, Dalcanale, Enrico, Cristofolini, Luigi
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Sprache:eng
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Zusammenfassung:Cavitand molecules having double bond terminated alkyl chains and different bridging groups at the upper rim have been grafted on H-terminated Si(100) surface via photochemical hydrosilylation of the double bonds. Pure and mixed monolayers have been obtained from mesitylene solutions of either pure cavitand or cavitand/1-octene mixtures. Angle resolved high-resolution X-ray photoelectron spectroscopy has been used as the main tool for the monolayer characterization. The cavitand decorated surface consists of Si−C bonded layers with the upper rim at the top of the layer. Grafting of pure cavitands leads to not-well-packed layers, which are not able to efficiently passivate the Si(100) surface. By contrast, monolayers obtained from cavitand/1-octene mixtures consist of well-packed layers since they prevent silicon oxidation after aging. AFM measurements showed that these monolayers have a structured topography, with objects protruding from the Si(100) surface with average heights compatible with the expected ones for cavitand molecules.
ISSN:0743-7463
1520-5827
DOI:10.1021/la060682p