Large melting-point hysteresis of Ge nanocrystals embedded in SiO2

Large melting-point hysteresis of Ge nanocrystals embedded in SiO2

The melting behavior of Ge nanocrystals embedded within SiO2 is evaluated using in situ transmission electron microscopy. The observed melting-point hysteresis is large (+/-17%) and nearly symmetric about the bulk melting point. This hysteresis is modeled successfully using classical nucleation theo...

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Veröffentlicht in:Physical review letters 2006-10, Vol.97 (15), p.155701-155701
Hauptverfasser: Xu, Q, Sharp, I D, Yuan, C W, Yi, D O, Liao, C Y, Glaeser, A M, Minor, A M, Beeman, J W, Ridgway, M C, Kluth, P, Ager, 3rd, J W, Chrzan, D C, Haller, E E
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Sprache:eng
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Zusammenfassung:The melting behavior of Ge nanocrystals embedded within SiO2 is evaluated using in situ transmission electron microscopy. The observed melting-point hysteresis is large (+/-17%) and nearly symmetric about the bulk melting point. This hysteresis is modeled successfully using classical nucleation theory without the need to invoke epitaxy.
ISSN:0031-9007
DOI:10.1103/PhysRevLett.97.155701