Direct evaluation of reflector effects on radiant flux from InGaN-based light-emitting diodes

A metal layer formed on the backside of InGaN/sapphire-based light-emitting diodes deteriorates the inherent optical power output. An experimental approach of a suspended die is employed to study the effects of such metal layers via a direct comparison in radiant flux from a discrete die with and wi...

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Veröffentlicht in:Applied Optics 2007-08, Vol.46 (23), p.5974-5978
Hauptverfasser: Masui, Hisashi, Fellows, Natalie N, Sato, Hitoshi, Asamizu, Hirokuni, Nakamura, Shuji, DenBaars, Steven P
Format: Artikel
Sprache:eng
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Zusammenfassung:A metal layer formed on the backside of InGaN/sapphire-based light-emitting diodes deteriorates the inherent optical power output. An experimental approach of a suspended die is employed to study the effects of such metal layers via a direct comparison in radiant flux from a discrete die with and without a reflector. A sphere package that employs no reflector is proposed and fabricated. Light extraction of the sphere design is discussed; a light source in the sphere package would not have to be either an ideal point or placed at the center of the sphere, due to a finite critical angle at the sphere/air interface.
ISSN:1559-128X
0003-6935
1539-4522
DOI:10.1364/ao.46.005974