Evidence of a pressure-induced metallization process in monoclinic VO2

Raman and combined infrared transmission and reflectivity measurements were carried out at room temperature (RT) on monoclinic VO2 over the 0-19 GPa and 0-14 GPa pressure ranges. Both lattice dynamics and optical gap show a remarkable stability up to P* approximately 10 GPa whereas subtle modificati...

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Veröffentlicht in:Physical review letters 2007-05, Vol.98 (19), p.196406-196406
Hauptverfasser: Arcangeletti, E, Baldassarre, L, Di Castro, D, Lupi, S, Malavasi, L, Marini, C, Perucchi, A, Postorino, P
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Sprache:eng
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Zusammenfassung:Raman and combined infrared transmission and reflectivity measurements were carried out at room temperature (RT) on monoclinic VO2 over the 0-19 GPa and 0-14 GPa pressure ranges. Both lattice dynamics and optical gap show a remarkable stability up to P* approximately 10 GPa whereas subtle modifications of V ion arrangements within the monoclinic lattice, together with the onset of a metallization process via band gap filling, are observed for P >P*. Differently from P=0, where the VO2 metallic phase is found only in conjunction with the rutile structure above 340 K, a new RT metallic phase within a monoclinic structure appears accessible in the high pressure regime.
ISSN:0031-9007
DOI:10.1103/PhysRevLett.98.196406