The study on photoreflectance characteristic of semi-insulating GaAs surface region by its exposure to 6 MeV electron beam

The study on photoreflectance characteristic of semi-insulating GaAs surface region by its exposure to 6 MeV electron beam

Photoreflectance measurements were performed to investigate the optical properties in the electron beam irradiation semi-insulating GaAs(e-beam irradiation GaAs) and semi-insulating GaAs(SI-GaAs). A considerable increase of the PR amplitudes has been registered after the e-beam irradiation in compar...

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Veröffentlicht in:Spectrochimica acta. Part A, Molecular and biomolecular spectroscopy Molecular and biomolecular spectroscopy, 2005-09, Vol.61 (11-12), p.2640-2642
Hauptverfasser: Yu, J I, Kim, K H, Bae, I H, Lee, D Y, Kim, D L
Format: Artikel
Sprache:eng
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Arsenicals - chemistry
Electrons
Gallium - chemistry
Optics and Photonics
Photochemistry
Photons
Spectrum Analysis
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container_end_page 2642
container_issue 11-12
container_start_page 2640
container_title Spectrochimica acta. Part A, Molecular and biomolecular spectroscopy
container_volume 61
creator Yu, J I
Kim, K H
Bae, I H
Lee, D Y
Kim, D L
description Photoreflectance measurements were performed to investigate the optical properties in the electron beam irradiation semi-insulating GaAs(e-beam irradiation GaAs) and semi-insulating GaAs(SI-GaAs). A considerable increase of the PR amplitudes has been registered after the e-beam irradiation in comparison with the GaAs. It is that result of a higher electron scattering on the lattice defects created by the e-beam.
doi_str_mv 10.1016/j.saa.2004.10.005
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subjects Arsenicals - chemistry
Electrons
Gallium - chemistry
Optics and Photonics
Photochemistry
Photons
Spectrum Analysis
title The study on photoreflectance characteristic of semi-insulating GaAs surface region by its exposure to 6 MeV electron beam
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