The study on photoreflectance characteristic of semi-insulating GaAs surface region by its exposure to 6 MeV electron beam

The study on photoreflectance characteristic of semi-insulating GaAs surface region by its exposure to 6 MeV electron beam

Photoreflectance measurements were performed to investigate the optical properties in the electron beam irradiation semi-insulating GaAs(e-beam irradiation GaAs) and semi-insulating GaAs(SI-GaAs). A considerable increase of the PR amplitudes has been registered after the e-beam irradiation in compar...

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Veröffentlicht in:Spectrochimica acta. Part A, Molecular and biomolecular spectroscopy Molecular and biomolecular spectroscopy, 2005-09, Vol.61 (11-12), p.2640-2642
Hauptverfasser: Yu, J I, Kim, K H, Bae, I H, Lee, D Y, Kim, D L
Format: Artikel
Sprache:eng
Schlagworte:
Arsenicals - chemistry
Electrons
Gallium - chemistry
Optics and Photonics
Photochemistry
Photons
Spectrum Analysis
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Zusammenfassung:Photoreflectance measurements were performed to investigate the optical properties in the electron beam irradiation semi-insulating GaAs(e-beam irradiation GaAs) and semi-insulating GaAs(SI-GaAs). A considerable increase of the PR amplitudes has been registered after the e-beam irradiation in comparison with the GaAs. It is that result of a higher electron scattering on the lattice defects created by the e-beam.
ISSN:1386-1425
DOI:10.1016/j.saa.2004.10.005