Germanium Nanowire Epitaxy: Shape and Orientation Control
Epitaxial growth of nanowires along the 〈111〉 directions was obtained on Ge(111), Ge(110), Ge(001), and heteroepitaxial Ge on Si(001) substrates at temperatures of 350 °C or less by gold-nanoparticle-catalyzed chemical vapor deposition. On Ge(111), the growth was mostly vertical. In addition to 〈111...
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| Veröffentlicht in: | Nano letters 2006-02, Vol.6 (2), p.318-323 |
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| creator | Adhikari, Hemant Marshall, Ann F Chidsey, Christopher E. D McIntyre, Paul C |
| description | Epitaxial growth of nanowires along the 〈111〉 directions was obtained on Ge(111), Ge(110), Ge(001), and heteroepitaxial Ge on Si(001) substrates at temperatures of 350 °C or less by gold-nanoparticle-catalyzed chemical vapor deposition. On Ge(111), the growth was mostly vertical. In addition to 〈111〉 growth, 〈110〉 growth was observed on Ge(001) and Ge(110) substrates. Tapering was avoided by the use of the two-temperature growth procedure, reported earlier by Greytak et al. |
| doi_str_mv | 10.1021/nl052231f |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_67639839</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>67639839</sourcerecordid><originalsourceid>FETCH-LOGICAL-a409t-b636e78e4d799d8eefe54a70092445b4f555e3d5325484aa58161c60d9d8dc713</originalsourceid><addsrcrecordid>eNpt0L9OwzAQBnALgWgpDLwAygISQ8CO_yRGLKgqBamiAzBH1-QiUiV2sRNBN1ZekychqFG7MN0NP313-gg5ZfSK0Yhdm4rKKOKs2CNDJjkNldbR_nZPxIAceb-klGou6SEZMCWUoDIektspuhpM2dbBExj7UToMJquygc_1zc_Xd_D8BisMwOTB3JVoGmhKa4KxNY2z1TE5KKDyeNLPEXm9n7yMH8LZfPo4vpuFIKhuwoXiCuMERR5rnSeIBUoBcfdNJIRciEJKiTyXPJIiEQAyYYpliuYdzrOY8RG52OSunH1v0TdpXfoMqwoM2tanKlZcJ1x38HIDM2e9d1ikK1fW4NYpo-lfVem2qs6e9aHtosZ8J_tuOnDeA_AZVIUDk5V-52JJRZTwnYPMp0vbOtN18c_BX0SZe_8</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>67639839</pqid></control><display><type>article</type><title>Germanium Nanowire Epitaxy: Shape and Orientation Control</title><source>MEDLINE</source><source>ACS Publications</source><creator>Adhikari, Hemant ; Marshall, Ann F ; Chidsey, Christopher E. D ; McIntyre, Paul C</creator><creatorcontrib>Adhikari, Hemant ; Marshall, Ann F ; Chidsey, Christopher E. D ; McIntyre, Paul C</creatorcontrib><description>Epitaxial growth of nanowires along the 〈111〉 directions was obtained on Ge(111), Ge(110), Ge(001), and heteroepitaxial Ge on Si(001) substrates at temperatures of 350 °C or less by gold-nanoparticle-catalyzed chemical vapor deposition. On Ge(111), the growth was mostly vertical. In addition to 〈111〉 growth, 〈110〉 growth was observed on Ge(001) and Ge(110) substrates. Tapering was avoided by the use of the two-temperature growth procedure, reported earlier by Greytak et al.</description><identifier>ISSN: 1530-6984</identifier><identifier>EISSN: 1530-6992</identifier><identifier>DOI: 10.1021/nl052231f</identifier><identifier>PMID: 16464057</identifier><language>eng</language><publisher>Washington, DC: American Chemical Society</publisher><subject>Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Germanium - chemistry ; Materials science ; Microscopy, Electron, Scanning - methods ; Nanopowders ; Nanoscale materials and structures: fabrication and characterization ; Nanotubes - chemistry ; Particle Size ; Phase diagrams and microstructures developed by solidification and solid-solid phase transformations ; Physics ; Quantum wires ; Sensitivity and Specificity ; Silicon - chemistry ; Surface Properties</subject><ispartof>Nano letters, 2006-02, Vol.6 (2), p.318-323</ispartof><rights>Copyright © 2006 American Chemical Society</rights><rights>2007 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a409t-b636e78e4d799d8eefe54a70092445b4f555e3d5325484aa58161c60d9d8dc713</citedby><cites>FETCH-LOGICAL-a409t-b636e78e4d799d8eefe54a70092445b4f555e3d5325484aa58161c60d9d8dc713</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/nl052231f$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/nl052231f$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,780,784,2765,27076,27924,27925,56738,56788</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=17504283$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/16464057$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Adhikari, Hemant</creatorcontrib><creatorcontrib>Marshall, Ann F</creatorcontrib><creatorcontrib>Chidsey, Christopher E. D</creatorcontrib><creatorcontrib>McIntyre, Paul C</creatorcontrib><title>Germanium Nanowire Epitaxy: Shape and Orientation Control</title><title>Nano letters</title><addtitle>Nano Lett</addtitle><description>Epitaxial growth of nanowires along the 〈111〉 directions was obtained on Ge(111), Ge(110), Ge(001), and heteroepitaxial Ge on Si(001) substrates at temperatures of 350 °C or less by gold-nanoparticle-catalyzed chemical vapor deposition. On Ge(111), the growth was mostly vertical. In addition to 〈111〉 growth, 〈110〉 growth was observed on Ge(001) and Ge(110) substrates. Tapering was avoided by the use of the two-temperature growth procedure, reported earlier by Greytak et al.</description><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Germanium - chemistry</subject><subject>Materials science</subject><subject>Microscopy, Electron, Scanning - methods</subject><subject>Nanopowders</subject><subject>Nanoscale materials and structures: fabrication and characterization</subject><subject>Nanotubes - chemistry</subject><subject>Particle Size</subject><subject>Phase diagrams and microstructures developed by solidification and solid-solid phase transformations</subject><subject>Physics</subject><subject>Quantum wires</subject><subject>Sensitivity and Specificity</subject><subject>Silicon - chemistry</subject><subject>Surface Properties</subject><issn>1530-6984</issn><issn>1530-6992</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><sourceid>EIF</sourceid><recordid>eNpt0L9OwzAQBnALgWgpDLwAygISQ8CO_yRGLKgqBamiAzBH1-QiUiV2sRNBN1ZekychqFG7MN0NP313-gg5ZfSK0Yhdm4rKKOKs2CNDJjkNldbR_nZPxIAceb-klGou6SEZMCWUoDIektspuhpM2dbBExj7UToMJquygc_1zc_Xd_D8BisMwOTB3JVoGmhKa4KxNY2z1TE5KKDyeNLPEXm9n7yMH8LZfPo4vpuFIKhuwoXiCuMERR5rnSeIBUoBcfdNJIRciEJKiTyXPJIiEQAyYYpliuYdzrOY8RG52OSunH1v0TdpXfoMqwoM2tanKlZcJ1x38HIDM2e9d1ikK1fW4NYpo-lfVem2qs6e9aHtosZ8J_tuOnDeA_AZVIUDk5V-52JJRZTwnYPMp0vbOtN18c_BX0SZe_8</recordid><startdate>20060201</startdate><enddate>20060201</enddate><creator>Adhikari, Hemant</creator><creator>Marshall, Ann F</creator><creator>Chidsey, Christopher E. D</creator><creator>McIntyre, Paul C</creator><general>American Chemical Society</general><scope>IQODW</scope><scope>CGR</scope><scope>CUY</scope><scope>CVF</scope><scope>ECM</scope><scope>EIF</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope></search><sort><creationdate>20060201</creationdate><title>Germanium Nanowire Epitaxy: Shape and Orientation Control</title><author>Adhikari, Hemant ; Marshall, Ann F ; Chidsey, Christopher E. D ; McIntyre, Paul C</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a409t-b636e78e4d799d8eefe54a70092445b4f555e3d5325484aa58161c60d9d8dc713</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Germanium - chemistry</topic><topic>Materials science</topic><topic>Microscopy, Electron, Scanning - methods</topic><topic>Nanopowders</topic><topic>Nanoscale materials and structures: fabrication and characterization</topic><topic>Nanotubes - chemistry</topic><topic>Particle Size</topic><topic>Phase diagrams and microstructures developed by solidification and solid-solid phase transformations</topic><topic>Physics</topic><topic>Quantum wires</topic><topic>Sensitivity and Specificity</topic><topic>Silicon - chemistry</topic><topic>Surface Properties</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Adhikari, Hemant</creatorcontrib><creatorcontrib>Marshall, Ann F</creatorcontrib><creatorcontrib>Chidsey, Christopher E. D</creatorcontrib><creatorcontrib>McIntyre, Paul C</creatorcontrib><collection>Pascal-Francis</collection><collection>Medline</collection><collection>MEDLINE</collection><collection>MEDLINE (Ovid)</collection><collection>MEDLINE</collection><collection>MEDLINE</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>Nano letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Adhikari, Hemant</au><au>Marshall, Ann F</au><au>Chidsey, Christopher E. D</au><au>McIntyre, Paul C</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Germanium Nanowire Epitaxy: Shape and Orientation Control</atitle><jtitle>Nano letters</jtitle><addtitle>Nano Lett</addtitle><date>2006-02-01</date><risdate>2006</risdate><volume>6</volume><issue>2</issue><spage>318</spage><epage>323</epage><pages>318-323</pages><issn>1530-6984</issn><eissn>1530-6992</eissn><abstract>Epitaxial growth of nanowires along the 〈111〉 directions was obtained on Ge(111), Ge(110), Ge(001), and heteroepitaxial Ge on Si(001) substrates at temperatures of 350 °C or less by gold-nanoparticle-catalyzed chemical vapor deposition. On Ge(111), the growth was mostly vertical. In addition to 〈111〉 growth, 〈110〉 growth was observed on Ge(001) and Ge(110) substrates. Tapering was avoided by the use of the two-temperature growth procedure, reported earlier by Greytak et al.</abstract><cop>Washington, DC</cop><pub>American Chemical Society</pub><pmid>16464057</pmid><doi>10.1021/nl052231f</doi><tpages>6</tpages></addata></record> |
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| subjects | Cross-disciplinary physics: materials science rheology Exact sciences and technology Germanium - chemistry Materials science Microscopy, Electron, Scanning - methods Nanopowders Nanoscale materials and structures: fabrication and characterization Nanotubes - chemistry Particle Size Phase diagrams and microstructures developed by solidification and solid-solid phase transformations Physics Quantum wires Sensitivity and Specificity Silicon - chemistry Surface Properties |
| title | Germanium Nanowire Epitaxy: Shape and Orientation Control |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T00%3A03%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Germanium%20Nanowire%20Epitaxy:%E2%80%89%20Shape%20and%20Orientation%20Control&rft.jtitle=Nano%20letters&rft.au=Adhikari,%20Hemant&rft.date=2006-02-01&rft.volume=6&rft.issue=2&rft.spage=318&rft.epage=323&rft.pages=318-323&rft.issn=1530-6984&rft.eissn=1530-6992&rft_id=info:doi/10.1021/nl052231f&rft_dat=%3Cproquest_cross%3E67639839%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=67639839&rft_id=info:pmid/16464057&rfr_iscdi=true |