Germanium Nanowire Epitaxy:  Shape and Orientation Control

Germanium Nanowire Epitaxy:  Shape and Orientation Control

Epitaxial growth of nanowires along the 〈111〉 directions was obtained on Ge(111), Ge(110), Ge(001), and heteroepitaxial Ge on Si(001) substrates at temperatures of 350 °C or less by gold-nanoparticle-catalyzed chemical vapor deposition. On Ge(111), the growth was mostly vertical. In addition to 〈111...

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Veröffentlicht in:Nano letters 2006-02, Vol.6 (2), p.318-323
Hauptverfasser: Adhikari, Hemant, Marshall, Ann F, Chidsey, Christopher E. D, McIntyre, Paul C
Format: Artikel
Sprache:eng
Schlagworte:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Germanium - chemistry
Materials science
Microscopy, Electron, Scanning - methods
Nanopowders
Nanoscale materials and structures: fabrication and characterization
Nanotubes - chemistry
Particle Size
Phase diagrams and microstructures developed by solidification and solid-solid phase transformations
Physics
Quantum wires
Sensitivity and Specificity
Silicon - chemistry
Surface Properties
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Zusammenfassung:Epitaxial growth of nanowires along the 〈111〉 directions was obtained on Ge(111), Ge(110), Ge(001), and heteroepitaxial Ge on Si(001) substrates at temperatures of 350 °C or less by gold-nanoparticle-catalyzed chemical vapor deposition. On Ge(111), the growth was mostly vertical. In addition to 〈111〉 growth, 〈110〉 growth was observed on Ge(001) and Ge(110) substrates. Tapering was avoided by the use of the two-temperature growth procedure, reported earlier by Greytak et al.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl052231f