Design of high efficiency multi-GHz SiGe HBT electro-optic modulator
We design and theoretically analyze a heterojunction bipolar transistor (HBT) electro-optic (EO) modulator with a composition graded SiGe base. The waveguide has a large cross-section of 1 microm for ease of fiber alignment. At a base-emitter bias of V BE = 2.5 V, a pi-phase shift requires 74.5 micr...
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| Veröffentlicht in: | Optics express 2009-08, Vol.17 (16), p.13425-13428 |
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| container_title | Optics express |
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| creator | Deng, Shengling Huang, Z Rena McDonald, J F |
| description | We design and theoretically analyze a heterojunction bipolar transistor (HBT) electro-optic (EO) modulator with a composition graded SiGe base. The waveguide has a large cross-section of 1 microm for ease of fiber alignment. At a base-emitter bias of V BE = 2.5 V, a pi-phase shift requires 74.5 microm interaction length for TM polarization at lambda = 1.55 microm. The total optical attenuation is 3.9 dB to achieve a pi-phase shift in this condition. This device is expected to operate at a switching speed of 2.4 GHz. |
| doi_str_mv | 10.1364/OE.17.013425 |
| format | Article |
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| source | MEDLINE; DOAJ Directory of Open Access Journals; EZB-FREE-00999 freely available EZB journals; Alma/SFX Local Collection |
| subjects | Computer Simulation Computer-Aided Design Electronics - instrumentation Equipment Design Equipment Failure Analysis Germanium Light Microwaves Models, Theoretical Optical Devices Scattering, Radiation Silicon Telecommunications - instrumentation Transducers |
| title | Design of high efficiency multi-GHz SiGe HBT electro-optic modulator |
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