Design of high efficiency multi-GHz SiGe HBT electro-optic modulator

We design and theoretically analyze a heterojunction bipolar transistor (HBT) electro-optic (EO) modulator with a composition graded SiGe base. The waveguide has a large cross-section of 1 microm for ease of fiber alignment. At a base-emitter bias of V BE = 2.5 V, a pi-phase shift requires 74.5 micr...

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Veröffentlicht in:	Optics express 2009-08, Vol.17 (16), p.13425-13428
Hauptverfasser:	Deng, Shengling, Huang, Z Rena, McDonald, J F
Format:	Artikel
Sprache:	eng
Schlagworte:	Computer Simulation Computer-Aided Design Electronics - instrumentation Equipment Design Equipment Failure Analysis Germanium Light Microwaves Models, Theoretical Optical Devices Scattering, Radiation Silicon Telecommunications - instrumentation Transducers
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	We design and theoretically analyze a heterojunction bipolar transistor (HBT) electro-optic (EO) modulator with a composition graded SiGe base. The waveguide has a large cross-section of 1 microm for ease of fiber alignment. At a base-emitter bias of V BE = 2.5 V, a pi-phase shift requires 74.5 microm interaction length for TM polarization at lambda = 1.55 microm. The total optical attenuation is 3.9 dB to achieve a pi-phase shift in this condition. This device is expected to operate at a switching speed of 2.4 GHz.
ISSN:	1094-4087 1094-4087
DOI:	10.1364/OE.17.013425