An L-band monolithic InAs/InP quantum dot mode-locked laser with femtosecond pulses

An L-band monolithic InAs/InP quantum dot mode-locked laser with femtosecond pulses

We have developed an InAs/InP quantum dot (QD) gain material using a double cap growth procedure and GaP sublayer to tune QDs into the L-band. By using it, a passive L-band mode-locked laser with pulse duration of 445 fs at the repetition rate of 46 GHz was demonstrated. The 3-dB linewidth of the RF...

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Veröffentlicht in:Optics express 2009-08, Vol.17 (16), p.13609-13614
Hauptverfasser: Lu, Z G, Liu, J R, Poole, P J, Raymond, S, Barrios, P J, Poitras, D, Pakulski, G, Grant, P, Roy-Guay, D
Format: Artikel
Sprache:eng
Schlagworte:
Arsenicals - chemistry
Computer Simulation
Computer-Aided Design
Equipment Design
Equipment Failure Analysis
Indium - chemistry
Lasers
Light
Microwaves
Models, Theoretical
Phosphines - chemistry
Quantum Dots
Scattering, Radiation
Semiconductors
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Zusammenfassung:We have developed an InAs/InP quantum dot (QD) gain material using a double cap growth procedure and GaP sublayer to tune QDs into the L-band. By using it, a passive L-band mode-locked laser with pulse duration of 445 fs at the repetition rate of 46 GHz was demonstrated. The 3-dB linewidth of the RF spectrum is less than 100 KHz. The lasing threshold injection current is 24 mA with an external differential quantum efficiency of 22% and an average output power of 27 mW. The relationship between pulse duration and 3-dB spectral bandwidth as a function of injection current was investigated.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.17.013609