Chemical Optimization of Self-Assembled Carbon Nanotube Transistors

We present the improvement of carbon nanotube field effects transistors (CNTFETs) performances by chemical tuning of the nanotube/substrate and nanotube/electrode interfaces. Our work is based on a method of selective placement of individual single walled carbon nanotubes (SWNTs) by patterned aminos...

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Veröffentlicht in:Nano letters 2005-03, Vol.5 (3), p.451-455
Hauptverfasser: Auvray, Stéphane, Derycke, Vincent, Goffman, Marcelo, Filoramo, Arianna, Jost, Oliver, Bourgoin, Jean-Philippe
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Sprache:eng
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Zusammenfassung:We present the improvement of carbon nanotube field effects transistors (CNTFETs) performances by chemical tuning of the nanotube/substrate and nanotube/electrode interfaces. Our work is based on a method of selective placement of individual single walled carbon nanotubes (SWNTs) by patterned aminosilane monolayer and its use for the fabrication of self-assembled nanotube transistors. This method brings a relevant solution to the problem of systematic connection of self-organized nanotubes. The aminosilane monolayer reactivity can be used to improve carrier injection and doping level of the SWNT. We show that the Schottky barrier height at the nanotube/metal interface can be diminished in a continuous fashion down to an almost ohmic contact through these chemical treatments. Moreover, sensitivity to 20 ppb of triethylamine is demonstrated for self-assembled CNTFETs, thus opening new prospects for gas sensors taking advantages of the chemical functionality of the aminosilane used for assembling the CNTFETs.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl048032y