High-Performance, Stable Organic Thin-Film Field-Effect Transistors Based on Bis-5‘-alkylthiophen-2‘-yl-2,6-anthracene Semiconductors
The development of new organic semiconductors with improved electrical performance and enhanced environmental stability is the focus of considerable research activity. This communication presents the design, synthesis, and device stability data for novel bis-5‘-alkylthiophen-2‘yl-2,6-anthracene orga...
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| Veröffentlicht in: | Journal of the American Chemical Society 2005-03, Vol.127 (8), p.2406-2407 |
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| container_issue | 8 |
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| container_title | Journal of the American Chemical Society |
| container_volume | 127 |
| creator | Meng, Hong Sun, Fangping Goldfinger, Marc B Jaycox, Gary D Li, Zhigang Marshall, Will J Blackman, Gregory S |
| description | The development of new organic semiconductors with improved electrical performance and enhanced environmental stability is the focus of considerable research activity. This communication presents the design, synthesis, and device stability data for novel bis-5‘-alkylthiophen-2‘yl-2,6-anthracene organic semiconductors. When incorporated into thin-film field-effect transistors, mobilities as high as 0.5 cm2/Vs and on/off current ratios greater than 107 are observed. We have investigated device stability in terms of both shelf life and operating lifetime. Devices incorporating the reported semiconductors display an average field-effect mobility of 0.4 cm2/Vs for DHTAnt and an on/off current ratio of 106 even after 15 months of storage. Furthermore, there is no decrease in performance during continuous operation of the devices over several thousand cycles. |
| doi_str_mv | 10.1021/ja043189d |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_67452572</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>67452572</sourcerecordid><originalsourceid>FETCH-LOGICAL-a447t-b3efd2dc995045309dd6519f096891ba6232c0961f020859748ebaad37fc5a2b3</originalsourceid><addsrcrecordid>eNptkMFu1DAQhi0EokvhwAugXEBCqsF24iQ-0qrLgha10oazNbGdrreOs9iJxN567RvwfDwJXu2qe-E0mplP_4w-hN5S8okSRj9vgBQ5rYV-hmaUM4I5ZeVzNCOEMFzVZX6GXsW4SW3BavoSnVFesUIIOkOPC3u3xrcmdEPowStzka1GaJ3JbsIdeKuyZm09nlvXZ3NrnMbXXWfUmDUBfLRxHELMLiEanQ0-u7QR878PfzC4-50b13bYro3HbD_aOcwuSgx-XAdQxptsZXqrBq8ntU95jV504KJ5c6zn6Of8urla4OXN129XX5YYiqIacZubTjOthOCk4DkRWpecio6Isha0hZLlTKWGdoSRmouqqE0LoPOqUxxYm5-jD4fcbRh-TSaOsrdRGefAm2GKsqwKzpKfBH48gCoMMQbTyW2wPYSdpETuvcsn74l9dwyd2t7oE3kUnYD3RwCiAtcle8rGE1fyqq7J_ig-cEmt-f20h3CfHssrLpvblaybRU6_L3_IxSkXVJSbYQo-ufvPg_8A5YanDw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>67452572</pqid></control><display><type>article</type><title>High-Performance, Stable Organic Thin-Film Field-Effect Transistors Based on Bis-5‘-alkylthiophen-2‘-yl-2,6-anthracene Semiconductors</title><source>American Chemical Society Journals</source><creator>Meng, Hong ; Sun, Fangping ; Goldfinger, Marc B ; Jaycox, Gary D ; Li, Zhigang ; Marshall, Will J ; Blackman, Gregory S</creator><creatorcontrib>Meng, Hong ; Sun, Fangping ; Goldfinger, Marc B ; Jaycox, Gary D ; Li, Zhigang ; Marshall, Will J ; Blackman, Gregory S</creatorcontrib><description>The development of new organic semiconductors with improved electrical performance and enhanced environmental stability is the focus of considerable research activity. This communication presents the design, synthesis, and device stability data for novel bis-5‘-alkylthiophen-2‘yl-2,6-anthracene organic semiconductors. When incorporated into thin-film field-effect transistors, mobilities as high as 0.5 cm2/Vs and on/off current ratios greater than 107 are observed. We have investigated device stability in terms of both shelf life and operating lifetime. Devices incorporating the reported semiconductors display an average field-effect mobility of 0.4 cm2/Vs for DHTAnt and an on/off current ratio of 106 even after 15 months of storage. Furthermore, there is no decrease in performance during continuous operation of the devices over several thousand cycles.</description><identifier>ISSN: 0002-7863</identifier><identifier>EISSN: 1520-5126</identifier><identifier>DOI: 10.1021/ja043189d</identifier><identifier>PMID: 15724991</identifier><identifier>CODEN: JACSAT</identifier><language>eng</language><publisher>Washington, DC: American Chemical Society</publisher><subject>Applied sciences ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Conductivity of specific materials ; Electronic transport in condensed matter ; Electronics ; Exact sciences and technology ; Molecular electronics, nanoelectronics ; Physics ; Polymers; organic compounds (including organic semiconductors) ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Journal of the American Chemical Society, 2005-03, Vol.127 (8), p.2406-2407</ispartof><rights>Copyright © 2005 American Chemical Society</rights><rights>2005 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a447t-b3efd2dc995045309dd6519f096891ba6232c0961f020859748ebaad37fc5a2b3</citedby><cites>FETCH-LOGICAL-a447t-b3efd2dc995045309dd6519f096891ba6232c0961f020859748ebaad37fc5a2b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/ja043189d$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/ja043189d$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,780,784,2765,27076,27924,27925,56738,56788</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=16578802$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/15724991$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Meng, Hong</creatorcontrib><creatorcontrib>Sun, Fangping</creatorcontrib><creatorcontrib>Goldfinger, Marc B</creatorcontrib><creatorcontrib>Jaycox, Gary D</creatorcontrib><creatorcontrib>Li, Zhigang</creatorcontrib><creatorcontrib>Marshall, Will J</creatorcontrib><creatorcontrib>Blackman, Gregory S</creatorcontrib><title>High-Performance, Stable Organic Thin-Film Field-Effect Transistors Based on Bis-5‘-alkylthiophen-2‘-yl-2,6-anthracene Semiconductors</title><title>Journal of the American Chemical Society</title><addtitle>J. Am. Chem. Soc</addtitle><description>The development of new organic semiconductors with improved electrical performance and enhanced environmental stability is the focus of considerable research activity. This communication presents the design, synthesis, and device stability data for novel bis-5‘-alkylthiophen-2‘yl-2,6-anthracene organic semiconductors. When incorporated into thin-film field-effect transistors, mobilities as high as 0.5 cm2/Vs and on/off current ratios greater than 107 are observed. We have investigated device stability in terms of both shelf life and operating lifetime. Devices incorporating the reported semiconductors display an average field-effect mobility of 0.4 cm2/Vs for DHTAnt and an on/off current ratio of 106 even after 15 months of storage. Furthermore, there is no decrease in performance during continuous operation of the devices over several thousand cycles.</description><subject>Applied sciences</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Conductivity of specific materials</subject><subject>Electronic transport in condensed matter</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Molecular electronics, nanoelectronics</subject><subject>Physics</subject><subject>Polymers; organic compounds (including organic semiconductors)</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0002-7863</issn><issn>1520-5126</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNptkMFu1DAQhi0EokvhwAugXEBCqsF24iQ-0qrLgha10oazNbGdrreOs9iJxN567RvwfDwJXu2qe-E0mplP_4w-hN5S8okSRj9vgBQ5rYV-hmaUM4I5ZeVzNCOEMFzVZX6GXsW4SW3BavoSnVFesUIIOkOPC3u3xrcmdEPowStzka1GaJ3JbsIdeKuyZm09nlvXZ3NrnMbXXWfUmDUBfLRxHELMLiEanQ0-u7QR878PfzC4-50b13bYro3HbD_aOcwuSgx-XAdQxptsZXqrBq8ntU95jV504KJ5c6zn6Of8urla4OXN129XX5YYiqIacZubTjOthOCk4DkRWpecio6Isha0hZLlTKWGdoSRmouqqE0LoPOqUxxYm5-jD4fcbRh-TSaOsrdRGefAm2GKsqwKzpKfBH48gCoMMQbTyW2wPYSdpETuvcsn74l9dwyd2t7oE3kUnYD3RwCiAtcle8rGE1fyqq7J_ig-cEmt-f20h3CfHssrLpvblaybRU6_L3_IxSkXVJSbYQo-ufvPg_8A5YanDw</recordid><startdate>20050302</startdate><enddate>20050302</enddate><creator>Meng, Hong</creator><creator>Sun, Fangping</creator><creator>Goldfinger, Marc B</creator><creator>Jaycox, Gary D</creator><creator>Li, Zhigang</creator><creator>Marshall, Will J</creator><creator>Blackman, Gregory S</creator><general>American Chemical Society</general><scope>BSCLL</scope><scope>IQODW</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope></search><sort><creationdate>20050302</creationdate><title>High-Performance, Stable Organic Thin-Film Field-Effect Transistors Based on Bis-5‘-alkylthiophen-2‘-yl-2,6-anthracene Semiconductors</title><author>Meng, Hong ; Sun, Fangping ; Goldfinger, Marc B ; Jaycox, Gary D ; Li, Zhigang ; Marshall, Will J ; Blackman, Gregory S</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a447t-b3efd2dc995045309dd6519f096891ba6232c0961f020859748ebaad37fc5a2b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Applied sciences</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Conductivity of specific materials</topic><topic>Electronic transport in condensed matter</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Molecular electronics, nanoelectronics</topic><topic>Physics</topic><topic>Polymers; organic compounds (including organic semiconductors)</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Meng, Hong</creatorcontrib><creatorcontrib>Sun, Fangping</creatorcontrib><creatorcontrib>Goldfinger, Marc B</creatorcontrib><creatorcontrib>Jaycox, Gary D</creatorcontrib><creatorcontrib>Li, Zhigang</creatorcontrib><creatorcontrib>Marshall, Will J</creatorcontrib><creatorcontrib>Blackman, Gregory S</creatorcontrib><collection>Istex</collection><collection>Pascal-Francis</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>Journal of the American Chemical Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Meng, Hong</au><au>Sun, Fangping</au><au>Goldfinger, Marc B</au><au>Jaycox, Gary D</au><au>Li, Zhigang</au><au>Marshall, Will J</au><au>Blackman, Gregory S</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-Performance, Stable Organic Thin-Film Field-Effect Transistors Based on Bis-5‘-alkylthiophen-2‘-yl-2,6-anthracene Semiconductors</atitle><jtitle>Journal of the American Chemical Society</jtitle><addtitle>J. Am. Chem. Soc</addtitle><date>2005-03-02</date><risdate>2005</risdate><volume>127</volume><issue>8</issue><spage>2406</spage><epage>2407</epage><pages>2406-2407</pages><issn>0002-7863</issn><eissn>1520-5126</eissn><coden>JACSAT</coden><abstract>The development of new organic semiconductors with improved electrical performance and enhanced environmental stability is the focus of considerable research activity. This communication presents the design, synthesis, and device stability data for novel bis-5‘-alkylthiophen-2‘yl-2,6-anthracene organic semiconductors. When incorporated into thin-film field-effect transistors, mobilities as high as 0.5 cm2/Vs and on/off current ratios greater than 107 are observed. We have investigated device stability in terms of both shelf life and operating lifetime. Devices incorporating the reported semiconductors display an average field-effect mobility of 0.4 cm2/Vs for DHTAnt and an on/off current ratio of 106 even after 15 months of storage. Furthermore, there is no decrease in performance during continuous operation of the devices over several thousand cycles.</abstract><cop>Washington, DC</cop><pub>American Chemical Society</pub><pmid>15724991</pmid><doi>10.1021/ja043189d</doi><tpages>2</tpages></addata></record> |
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| subjects | Applied sciences Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity of specific materials Electronic transport in condensed matter Electronics Exact sciences and technology Molecular electronics, nanoelectronics Physics Polymers organic compounds (including organic semiconductors) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | High-Performance, Stable Organic Thin-Film Field-Effect Transistors Based on Bis-5‘-alkylthiophen-2‘-yl-2,6-anthracene Semiconductors |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T10%3A26%3A31IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High-Performance,%20Stable%20Organic%20Thin-Film%20Field-Effect%20Transistors%20Based%20on%20Bis-5%E2%80%98-alkylthiophen-2%E2%80%98-yl-2,6-anthracene%20Semiconductors&rft.jtitle=Journal%20of%20the%20American%20Chemical%20Society&rft.au=Meng,%20Hong&rft.date=2005-03-02&rft.volume=127&rft.issue=8&rft.spage=2406&rft.epage=2407&rft.pages=2406-2407&rft.issn=0002-7863&rft.eissn=1520-5126&rft.coden=JACSAT&rft_id=info:doi/10.1021/ja043189d&rft_dat=%3Cproquest_cross%3E67452572%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=67452572&rft_id=info:pmid/15724991&rfr_iscdi=true |