High-Performance, Stable Organic Thin-Film Field-Effect Transistors Based on Bis-5‘-alkylthiophen-2‘-yl-2,6-anthracene Semiconductors

The development of new organic semiconductors with improved electrical performance and enhanced environmental stability is the focus of considerable research activity. This communication presents the design, synthesis, and device stability data for novel bis-5‘-alkylthiophen-2‘yl-2,6-anthracene orga...

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Veröffentlicht in:Journal of the American Chemical Society 2005-03, Vol.127 (8), p.2406-2407
Hauptverfasser: Meng, Hong, Sun, Fangping, Goldfinger, Marc B, Jaycox, Gary D, Li, Zhigang, Marshall, Will J, Blackman, Gregory S
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Sprache:eng
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Zusammenfassung:The development of new organic semiconductors with improved electrical performance and enhanced environmental stability is the focus of considerable research activity. This communication presents the design, synthesis, and device stability data for novel bis-5‘-alkylthiophen-2‘yl-2,6-anthracene organic semiconductors. When incorporated into thin-film field-effect transistors, mobilities as high as 0.5 cm2/Vs and on/off current ratios greater than 107 are observed. We have investigated device stability in terms of both shelf life and operating lifetime. Devices incorporating the reported semiconductors display an average field-effect mobility of 0.4 cm2/Vs for DHTAnt and an on/off current ratio of 106 even after 15 months of storage. Furthermore, there is no decrease in performance during continuous operation of the devices over several thousand cycles.
ISSN:0002-7863
1520-5126
DOI:10.1021/ja043189d