Volatility, High Thermal Stability, and Low Melting Points in Heavier Alkaline Earth Metal Complexes Containing Tris(pyrazolyl)borate Ligands

Treatment of MI2 (M = Ca, Sr) or BaI2(THF)3 with 2 equiv of potassium tris(3,5-diethylpyrazolyl)borate (KTpEt2) or potassium tris(3,5-di-n-propylpyrazolyl)borate (KTpnPr2) in hexane at ambient temperature afforded CaTpEt2 2 (64%), SrTpEt2 2 (64%), BaTpEt2 2 (67%), CaTpnPr2 2 (51%), SrTpnPr2 2 (75%),...

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Veröffentlicht in:Inorganic chemistry 2009-06, Vol.48 (12), p.5303-5312
Hauptverfasser: Saly, Mark J, Heeg, Mary Jane, Winter, Charles H
Format: Artikel
Sprache:eng
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Zusammenfassung:Treatment of MI2 (M = Ca, Sr) or BaI2(THF)3 with 2 equiv of potassium tris(3,5-diethylpyrazolyl)borate (KTpEt2) or potassium tris(3,5-di-n-propylpyrazolyl)borate (KTpnPr2) in hexane at ambient temperature afforded CaTpEt2 2 (64%), SrTpEt2 2 (64%), BaTpEt2 2 (67%), CaTpnPr2 2 (51%), SrTpnPr2 2 (75%), and BaTpnPr2 2 (39%). Crystal structure determinations of CaTpEt2 2, SrTpEt2 2, and BaTpEt2 2 revealed monomeric structures. X-ray structural determinations for strontium tris(pyrazolyl)borate (SrTp2) and barium tris(pyrazolyl)borate ([BaTp2]2) show that SrTp2 exists as a monomer and [BaTp2]2 exists as a dimer containing two bridging Tp ligands. The thermogravimetric analysis traces, preparative sublimations, and melting point/decomposition determinations demonstrate generally very high thermal stabilities and reasonable volatilities. SrTp2 has the highest volatility with a sublimation temperature of 200 °C/0.05 Torr. [BaTp2]2 is the least thermally stable with a decomposition temperature of 330 °C and a percent residue of 46.5% at 450 °C in the thermogravimetric analysis trace. SrTpEt2 2, BaTpEt2 2, CaTpnPr2 2, SrTpnPr2 2, and BaTpnPr2 2 vaporize as liquids between 210 and 240 °C at 0.05 Torr. BaTpEt2 2 and BaTpnPr2 2 decompose at about 375 °C, whereas MTpEt2 2 and MTpnPr2 2 (M = Ca, Sr) are stable to >400 °C. Several of these new complexes represent promising precursors for chemical vapor deposition and atomic layer deposition film growth techniques.
ISSN:0020-1669
1520-510X
DOI:10.1021/ic900342j