Surface Diffusion and Substrate−Nanowire Adatom Exchange in InAs Nanowire Growth

We report new fundamental insights into InAs nanowire (NW) nucleation and evolution on InAs (111)B surfaces using organometallic vapor phase epitaxy and present the first experimental demonstration of two distinct NW growth regimes, defined by the direction of substrate−NW adatom exchange, that lead to nonlinear growth rates. We show that the NW elongation rate and morphology in these two growth regimes are governed by the relative difference between the In adatom diffusion lengths on the growth substrate surface and on the NW sidewalls, resulting in strong growth rate dependence on the NW length. These results indicate that surface solid−phase diffusion of In adatoms is a key process in InAs NW growth, which is also supported by diameter-dependent growth rates. These developments enable rational growth of axial and radial NW heterostructures.