Two-Terminal Nanoelectromechanical Devices Based on Germanium Nanowires
A two-terminal bistable device, having both ON and OFF regimes, has been demonstrated with Ge nanowires using an in situ TEM−STM technique. The function of the device is based on delicately balancing electrostatic, elastic, and adhesion forces between the nanowires and the contacts, which can be con...
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| Veröffentlicht in: | Nano letters 2009-05, Vol.9 (5), p.1824-1829 |
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| container_issue | 5 |
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| container_title | Nano letters |
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| creator | Andzane, Jana Petkov, Nikolay Livshits, Aleksandrs I Boland, John J Holmes, Justin D Erts, Donats |
| description | A two-terminal bistable device, having both ON and OFF regimes, has been demonstrated with Ge nanowires using an in situ TEM−STM technique. The function of the device is based on delicately balancing electrostatic, elastic, and adhesion forces between the nanowires and the contacts, which can be controlled by the applied voltage. The operation and failure conditions of the bistable device were investigated, i.e. the influence of nanowire diameter, the surface oxide layer on the nanowires and the current density. During ON/OFF cycles the Ge nanowires were observed to be more stable than carbon nanotubes, working at similar conditions, due to the higher mechanical stability of the nanowires. The higher resistivity of Ge nanowires, compared to carbon nanotubes, provides potential application of these 1D nanostructures in high-voltage devices. |
| doi_str_mv | 10.1021/nl8037807 |
| format | Article |
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The function of the device is based on delicately balancing electrostatic, elastic, and adhesion forces between the nanowires and the contacts, which can be controlled by the applied voltage. The operation and failure conditions of the bistable device were investigated, i.e. the influence of nanowire diameter, the surface oxide layer on the nanowires and the current density. During ON/OFF cycles the Ge nanowires were observed to be more stable than carbon nanotubes, working at similar conditions, due to the higher mechanical stability of the nanowires. The higher resistivity of Ge nanowires, compared to carbon nanotubes, provides potential application of these 1D nanostructures in high-voltage devices.</description><identifier>ISSN: 1530-6984</identifier><identifier>EISSN: 1530-6992</identifier><identifier>DOI: 10.1021/nl8037807</identifier><identifier>PMID: 19323476</identifier><language>eng</language><publisher>Washington, DC: American Chemical Society</publisher><subject>Applied sciences ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Electronics ; Exact sciences and technology ; Materials science ; Mechanical and acoustical properties of condensed matter ; Mechanical properties of nanoscale materials ; Micro- and nanoelectromechanical devices (mems/nems) ; Nanocrystalline materials ; Nanoscale materials and structures: fabrication and characterization ; Physics ; Quantum wires ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Nano letters, 2009-05, Vol.9 (5), p.1824-1829</ispartof><rights>Copyright © 2009 American Chemical Society</rights><rights>2009 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a343t-b08528323639f64b4edcec6eb0f9db1b20b6ab25aeecfbc0b431f088252643e73</citedby><cites>FETCH-LOGICAL-a343t-b08528323639f64b4edcec6eb0f9db1b20b6ab25aeecfbc0b431f088252643e73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/nl8037807$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/nl8037807$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,776,780,2752,27053,27901,27902,56713,56763</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21495861$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/19323476$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Andzane, Jana</creatorcontrib><creatorcontrib>Petkov, Nikolay</creatorcontrib><creatorcontrib>Livshits, Aleksandrs I</creatorcontrib><creatorcontrib>Boland, John J</creatorcontrib><creatorcontrib>Holmes, Justin D</creatorcontrib><creatorcontrib>Erts, Donats</creatorcontrib><title>Two-Terminal Nanoelectromechanical Devices Based on Germanium Nanowires</title><title>Nano letters</title><addtitle>Nano Lett</addtitle><description>A two-terminal bistable device, having both ON and OFF regimes, has been demonstrated with Ge nanowires using an in situ TEM−STM technique. The function of the device is based on delicately balancing electrostatic, elastic, and adhesion forces between the nanowires and the contacts, which can be controlled by the applied voltage. The operation and failure conditions of the bistable device were investigated, i.e. the influence of nanowire diameter, the surface oxide layer on the nanowires and the current density. During ON/OFF cycles the Ge nanowires were observed to be more stable than carbon nanotubes, working at similar conditions, due to the higher mechanical stability of the nanowires. The higher resistivity of Ge nanowires, compared to carbon nanotubes, provides potential application of these 1D nanostructures in high-voltage devices.</description><subject>Applied sciences</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Mechanical and acoustical properties of condensed matter</subject><subject>Mechanical properties of nanoscale materials</subject><subject>Micro- and nanoelectromechanical devices (mems/nems)</subject><subject>Nanocrystalline materials</subject><subject>Nanoscale materials and structures: fabrication and characterization</subject><subject>Physics</subject><subject>Quantum wires</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>1530-6984</issn><issn>1530-6992</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNptkE1PwzAMhiMEYjA48AdQLyBxKDgfTdsjDBhIE1zGuUpSV3Rqm5GsTPx7MlZtF0627Md-pYeQCwq3FBi965oMeJpBekBOaMIhlnnODnd9Jkbk1PsFAOQ8gWMyojlnXKTyhEznaxvP0bV1p5roTXUWGzQrZ1s0n6qrTZg-4ndt0EcPymMZ2S6aBj7s-vbvYF079GfkqFKNx_OhjsnH89N88hLP3qevk_tZrLjgq1hDlrAshEueV1JogaVBI1FDlZeaagZaKs0ShWgqbUALTivIMpYwKTimfEyut3-Xzn716FdFW3uDTaM6tL0vZMo4BdiAN1vQOOu9w6pYurpV7qegUGysFTtrgb0cnva6xXJPDpoCcDUAygcjlVOdqf2OY1TkSSbpnlPGFwvbuyDV_xP4C3DTf_o</recordid><startdate>20090513</startdate><enddate>20090513</enddate><creator>Andzane, Jana</creator><creator>Petkov, Nikolay</creator><creator>Livshits, Aleksandrs I</creator><creator>Boland, John J</creator><creator>Holmes, Justin D</creator><creator>Erts, Donats</creator><general>American Chemical Society</general><scope>IQODW</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope></search><sort><creationdate>20090513</creationdate><title>Two-Terminal Nanoelectromechanical Devices Based on Germanium Nanowires</title><author>Andzane, Jana ; Petkov, Nikolay ; Livshits, Aleksandrs I ; Boland, John J ; Holmes, Justin D ; Erts, Donats</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a343t-b08528323639f64b4edcec6eb0f9db1b20b6ab25aeecfbc0b431f088252643e73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Applied sciences</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Mechanical and acoustical properties of condensed matter</topic><topic>Mechanical properties of nanoscale materials</topic><topic>Micro- and nanoelectromechanical devices (mems/nems)</topic><topic>Nanocrystalline materials</topic><topic>Nanoscale materials and structures: fabrication and characterization</topic><topic>Physics</topic><topic>Quantum wires</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Andzane, Jana</creatorcontrib><creatorcontrib>Petkov, Nikolay</creatorcontrib><creatorcontrib>Livshits, Aleksandrs I</creatorcontrib><creatorcontrib>Boland, John J</creatorcontrib><creatorcontrib>Holmes, Justin D</creatorcontrib><creatorcontrib>Erts, Donats</creatorcontrib><collection>Pascal-Francis</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>Nano letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Andzane, Jana</au><au>Petkov, Nikolay</au><au>Livshits, Aleksandrs I</au><au>Boland, John J</au><au>Holmes, Justin D</au><au>Erts, Donats</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Two-Terminal Nanoelectromechanical Devices Based on Germanium Nanowires</atitle><jtitle>Nano letters</jtitle><addtitle>Nano Lett</addtitle><date>2009-05-13</date><risdate>2009</risdate><volume>9</volume><issue>5</issue><spage>1824</spage><epage>1829</epage><pages>1824-1829</pages><issn>1530-6984</issn><eissn>1530-6992</eissn><abstract>A two-terminal bistable device, having both ON and OFF regimes, has been demonstrated with Ge nanowires using an in situ TEM−STM technique. The function of the device is based on delicately balancing electrostatic, elastic, and adhesion forces between the nanowires and the contacts, which can be controlled by the applied voltage. The operation and failure conditions of the bistable device were investigated, i.e. the influence of nanowire diameter, the surface oxide layer on the nanowires and the current density. During ON/OFF cycles the Ge nanowires were observed to be more stable than carbon nanotubes, working at similar conditions, due to the higher mechanical stability of the nanowires. The higher resistivity of Ge nanowires, compared to carbon nanotubes, provides potential application of these 1D nanostructures in high-voltage devices.</abstract><cop>Washington, DC</cop><pub>American Chemical Society</pub><pmid>19323476</pmid><doi>10.1021/nl8037807</doi><tpages>6</tpages></addata></record> |
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| subjects | Applied sciences Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Electronics Exact sciences and technology Materials science Mechanical and acoustical properties of condensed matter Mechanical properties of nanoscale materials Micro- and nanoelectromechanical devices (mems/nems) Nanocrystalline materials Nanoscale materials and structures: fabrication and characterization Physics Quantum wires Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Two-Terminal Nanoelectromechanical Devices Based on Germanium Nanowires |
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