Two-Terminal Nanoelectromechanical Devices Based on Germanium Nanowires

A two-terminal bistable device, having both ON and OFF regimes, has been demonstrated with Ge nanowires using an in situ TEM−STM technique. The function of the device is based on delicately balancing electrostatic, elastic, and adhesion forces between the nanowires and the contacts, which can be con...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Nano letters 2009-05, Vol.9 (5), p.1824-1829
Hauptverfasser: Andzane, Jana, Petkov, Nikolay, Livshits, Aleksandrs I, Boland, John J, Holmes, Justin D, Erts, Donats
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A two-terminal bistable device, having both ON and OFF regimes, has been demonstrated with Ge nanowires using an in situ TEM−STM technique. The function of the device is based on delicately balancing electrostatic, elastic, and adhesion forces between the nanowires and the contacts, which can be controlled by the applied voltage. The operation and failure conditions of the bistable device were investigated, i.e. the influence of nanowire diameter, the surface oxide layer on the nanowires and the current density. During ON/OFF cycles the Ge nanowires were observed to be more stable than carbon nanotubes, working at similar conditions, due to the higher mechanical stability of the nanowires. The higher resistivity of Ge nanowires, compared to carbon nanotubes, provides potential application of these 1D nanostructures in high-voltage devices.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl8037807