Electrochemical and Conductivity Measurements of Single-Wall Carbon Nanotube Network Electrodes

The electrochemical response of two-dimensional networks of pristine single-wall carbon nanotubes (SWNTs) has been investigated. SWNTs were grown by catalyzed chemical vapor deposition on an insulating SiO2 substrate, and then electrically contacted by lithographically defined Au electrodes. Subsequ...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of the American Chemical Society 2004-12, Vol.126 (51), p.16724-16725
Hauptverfasser: Day, Thomas M, Wilson, Neil R, Macpherson, Julie V
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The electrochemical response of two-dimensional networks of pristine single-wall carbon nanotubes (SWNTs) has been investigated. SWNTs were grown by catalyzed chemical vapor deposition on an insulating SiO2 substrate, and then electrically contacted by lithographically defined Au electrodes. Subsequent insulation of the contact electrodes enabled the electrochemical properties of the SWNT network to be isolated and directly studied for the first time. The electrochemical activity of the SWNT network was found to be strongly dependent on the applied potential. For the same SWNT electrode, the limiting current for the oxidation of 5 mM Fe(phen)3 2+ was found to be much greater than expected based on the signal for the reduction of 5 mM Ru(NH3)6 3+. Simultaneous conductance and electrochemical measurements demonstrated decreasing conductance as the potential was scanned negative (versus Ag/AgCl) with the minimum conductance at around the reduction potential for Ru(NH3)6 3+. These results are consistent with the presence of both metallic and semiconducting SWNTs in the SWNT network electrode. Moreover, these results show that through appropriate choice of mediator and electrode potential, metallic SWNTs can be electrochemically addressed independently of semiconducting SWNTs.
ISSN:0002-7863
1520-5126
DOI:10.1021/ja044540y