Voltage refinement by deficit HOLZ line geometry

A method of refining electron beam voltage from deficit line intersections, using a quasi-kinematic scattering approximation, is described and applied to a silicon standard. It is shown that dynamical corrections are necessary for higher-index zone axes, such as 〈310〉 and 〈411〉, where a single deficit line associated with one dominant Bloch state is visible. This leads to a substantial difference in the refined voltage compared with that obtained from a purely kinematic approximation. Neglect of this dynamical correction term effectively invokes a systematic error that may lead to high precision but poor accuracy in higher-order Laue zone measurements of beam voltage or lattice parameters. Although relatively small, differences in the dynamical correction necessary for these two zones are confirmed experimentally for 100–300 keV electrons.