Structure of the Buried Metal−Molecule Interface in Organic Thin Film Devices

By use of specular X-ray reflectivity (XR) the structure of a metal-covered organic thin film device is measured with angstrom resolution. The model system is a Langmuir−Blodgett (LB) film, sandwiched between a silicon substrate and a top electrode consisting of 25 Å titanium and 100 Å aluminum. By...

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Veröffentlicht in:	Nano letters 2009-03, Vol.9 (3), p.1052-1057
Hauptverfasser:	Hansen, Christian R, Sørensen, Thomas J, Glyvradal, Magni, Larsen, Jacob, Eisenhardt, Sara H, Bjørnholm, Thomas, Nielsen, Martin M, Feidenhans’l, Robert, Laursen, Bo W
Format:	Artikel
Sprache:	eng
Schlagworte:	Algorithms Aluminum - chemistry Applied sciences Eicosanoic Acids - chemistry Electrodes Electronics Electrons Equipment Design Exact sciences and technology Lead - chemistry Metal Nanoparticles - chemistry Models, Theoretical Molecular Conformation Molecular electronics, nanoelectronics Nanotechnology - methods Organic Chemicals - chemistry Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Surface Properties X-Rays
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Zusammenfassung:	By use of specular X-ray reflectivity (XR) the structure of a metal-covered organic thin film device is measured with angstrom resolution. The model system is a Langmuir−Blodgett (LB) film, sandwiched between a silicon substrate and a top electrode consisting of 25 Å titanium and 100 Å aluminum. By comparison of XR data for the five-layer Pb2+ arachidate LB film before and after vapor deposition of the Ti/Al top electrode, a detailed account of the structural damage to the organic film at the buried metal−molecule interface is obtained. We find that the organized structure of the two topmost LB layers (∼5 nm) is completely destroyed due to the metal deposition.
ISSN:	1530-6984 1530-6992
DOI:	10.1021/nl803393m