Wide energy-window view on the density of states and hole mobility in poly(p-phenylene vinylene)

Using an electrochemically gated transistor, we achieved controlled and reversible doping of poly(p-phenylene vinylene) in a large concentration range. Our data open a wide energy-window view on the density of states (DOS) and show, for the first time, that the core of the DOS function is Gaussian, while the low-energy tail has a more complex structure. The hole mobility increases by more than 4 orders of magnitude when the electrochemical potential is scanned through the DOS.