Epitaxial graphene How silicon leaves the scene

Epitaxial graphene How silicon leaves the scene

Large and homogeneous layers of graphene are obtained by annealing silicon carbide in a dense noble gas atmosphere that controls the way in which silicon sublimates. Epitaxial graphene thus gets back on track towards future electronic applications.

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Nature materials 2009-03, Vol.8 (3), p.171-172
1. Verfasser: Sutter, Peter
Format: Artikel
Sprache:eng
Schlagworte:
Carbon
Electronics
Gases
Materials science
Silicon
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Large and homogeneous layers of graphene are obtained by annealing silicon carbide in a dense noble gas atmosphere that controls the way in which silicon sublimates. Epitaxial graphene thus gets back on track towards future electronic applications.
ISSN:1476-1122
1476-4660
DOI:10.1038/nmat2392