Analysis of mechanical properties of N(2) in situ doped polycrystalline 3C-SiC thin films by chemical vapor deposition using single-precursor hexamethyildisilane

This paper describes the mechanical properties of poly (polycrystalline) 3C-SiC thin films with N(2) in situ doping. In this work, in situ doped poly 3C-SiC film was deposited by using the atmospheric pressure chemical vapor deposition (APCVD) method at 1200 'C using single-precursor hexamethyildisilane: Si(2)(CH(3))(6) (HMDS) as Si and C precursors, and 0[not, vert, similar]100 sccm N(2) as the dopant source gas. The mechanical properties of doped poly 3C-SiC thin films were measured by nano-indentation. Young's modulus and hardness were measured to be 285 and 35 GPa at 0 sccm N(2), respectively. Young's modulus and hardness decreased with increasing N(2) flow rate. Surface morphology was evaluated by atomic force microscopy (AFM) according to N(2) flow rate.