Investigation on IGBT High-Frequency Plasma Extraction Transient Time Oscillation
High-frequency voltage oscillations occasionally appear between insulated gate bipolar transistor's (IGBTpsilas) collector and emitter terminals during turn-off operation. Based on the plasma extraction transit-time theory, the turn-off oscillations were investigated experimentally and analytic...
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| Veröffentlicht in: | IEEE transactions on power electronics 2009-06, Vol.24 (6), p.1570-1576 |
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| container_end_page | 1576 |
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| container_title | IEEE transactions on power electronics |
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| creator | Fujita, S. Hussein, K.H. Kitamura, S. Yamaguchi, T. |
| description | High-frequency voltage oscillations occasionally appear between insulated gate bipolar transistor's (IGBTpsilas) collector and emitter terminals during turn-off operation. Based on the plasma extraction transit-time theory, the turn-off oscillations were investigated experimentally and analytically using real-sized high-voltage IGBT modules. Generating mechanism of the turn-off oscillations was clarified by 2D device simulation. In addition, a practical method for preventing the turn-off oscillations will be proposed in the paper. |
| doi_str_mv | 10.1109/TPEL.2009.2015142 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_36344125</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>5071724</ieee_id><sourcerecordid>875016360</sourcerecordid><originalsourceid>FETCH-LOGICAL-c451t-9d9c7417f05714da9fb3754a94f894547c5b689d4c08f5dcfb8ff2266a1b6fe3</originalsourceid><addsrcrecordid>eNp90U1LAzEQBuAgCtaPHyBeFkE9rc7s5vOoUrVQUGHvIU0TjWx3NdmK_ntTWzx4EEJyyJNhJi8hRwgXiKAum8fx9KICUHlDhrTaIiNUFEtAENtkBFKyUipV75K9lF4BkDLAEXmadB8uDeHZDKHvirwmd9dNcR-eX8rb6N6XrrNfxWNr0sIU488hGvsDm2i6FFw3FE1YuOIh2dC2PzUOyI43bXKHm3OfNLfj5ua-nD7cTW6upqWlDIdSzZUVFIUHJpDOjfKzWjBqFPVSUUaFZTMu1ZxakJ7NrZ9J76uKc4Mz7l29T87XZd9in7tMg16EZF1uonP9Mmkp8ny85pDl2b-y5jWlWLEMT_7A134ZuzyEroBzmZXKCNfIxj6l6Lx-i2Fh4pdG0Kso9CoKvYpCb6LIb043hU2ypvX572xIvw8rFJVAkNkdr11wzv1eMxAZ0Pob7QCQzA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>206684419</pqid></control><display><type>article</type><title>Investigation on IGBT High-Frequency Plasma Extraction Transient Time Oscillation</title><source>IEEE Electronic Library (IEL)</source><creator>Fujita, S. ; Hussein, K.H. ; Kitamura, S. ; Yamaguchi, T.</creator><creatorcontrib>Fujita, S. ; Hussein, K.H. ; Kitamura, S. ; Yamaguchi, T.</creatorcontrib><description>High-frequency voltage oscillations occasionally appear between insulated gate bipolar transistor's (IGBTpsilas) collector and emitter terminals during turn-off operation. Based on the plasma extraction transit-time theory, the turn-off oscillations were investigated experimentally and analytically using real-sized high-voltage IGBT modules. Generating mechanism of the turn-off oscillations was clarified by 2D device simulation. In addition, a practical method for preventing the turn-off oscillations will be proposed in the paper.</description><identifier>ISSN: 0885-8993</identifier><identifier>EISSN: 1941-0107</identifier><identifier>DOI: 10.1109/TPEL.2009.2015142</identifier><identifier>CODEN: ITPEE8</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Admittance ; Applied sciences ; Capacitance ; Circuits ; Device simulation ; Electric currents ; Electric potential ; Electrical engineering. Electrical power engineering ; Electromagnetic interference ; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics ; Electronics ; Exact sciences and technology ; Extraction ; IGBT ; Insulated gate bipolar transistors ; Insulation ; Mathematical analysis ; negative resistance ; Oscillations ; Oscillators ; Other multijunction devices. Power transistors. Thyristors ; Plasma ; Plasma devices ; Plasma properties ; Power electronics, power supplies ; Semiconductor diodes ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Simulation ; Substrates ; Terminals ; Transistors ; turn- off oscillation ; Voltage</subject><ispartof>IEEE transactions on power electronics, 2009-06, Vol.24 (6), p.1570-1576</ispartof><rights>2009 INIST-CNRS</rights><rights>Copyright Institute of Electrical and Electronics Engineers, Inc. (IEEE) Jun 2009</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c451t-9d9c7417f05714da9fb3754a94f894547c5b689d4c08f5dcfb8ff2266a1b6fe3</citedby><cites>FETCH-LOGICAL-c451t-9d9c7417f05714da9fb3754a94f894547c5b689d4c08f5dcfb8ff2266a1b6fe3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5071724$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>315,781,785,797,27929,27930,54763</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5071724$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21727108$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Fujita, S.</creatorcontrib><creatorcontrib>Hussein, K.H.</creatorcontrib><creatorcontrib>Kitamura, S.</creatorcontrib><creatorcontrib>Yamaguchi, T.</creatorcontrib><title>Investigation on IGBT High-Frequency Plasma Extraction Transient Time Oscillation</title><title>IEEE transactions on power electronics</title><addtitle>TPEL</addtitle><description>High-frequency voltage oscillations occasionally appear between insulated gate bipolar transistor's (IGBTpsilas) collector and emitter terminals during turn-off operation. Based on the plasma extraction transit-time theory, the turn-off oscillations were investigated experimentally and analytically using real-sized high-voltage IGBT modules. Generating mechanism of the turn-off oscillations was clarified by 2D device simulation. In addition, a practical method for preventing the turn-off oscillations will be proposed in the paper.</description><subject>Admittance</subject><subject>Applied sciences</subject><subject>Capacitance</subject><subject>Circuits</subject><subject>Device simulation</subject><subject>Electric currents</subject><subject>Electric potential</subject><subject>Electrical engineering. Electrical power engineering</subject><subject>Electromagnetic interference</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Extraction</subject><subject>IGBT</subject><subject>Insulated gate bipolar transistors</subject><subject>Insulation</subject><subject>Mathematical analysis</subject><subject>negative resistance</subject><subject>Oscillations</subject><subject>Oscillators</subject><subject>Other multijunction devices. Power transistors. Thyristors</subject><subject>Plasma</subject><subject>Plasma devices</subject><subject>Plasma properties</subject><subject>Power electronics, power supplies</subject><subject>Semiconductor diodes</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Simulation</subject><subject>Substrates</subject><subject>Terminals</subject><subject>Transistors</subject><subject>turn- off oscillation</subject><subject>Voltage</subject><issn>0885-8993</issn><issn>1941-0107</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp90U1LAzEQBuAgCtaPHyBeFkE9rc7s5vOoUrVQUGHvIU0TjWx3NdmK_ntTWzx4EEJyyJNhJi8hRwgXiKAum8fx9KICUHlDhrTaIiNUFEtAENtkBFKyUipV75K9lF4BkDLAEXmadB8uDeHZDKHvirwmd9dNcR-eX8rb6N6XrrNfxWNr0sIU488hGvsDm2i6FFw3FE1YuOIh2dC2PzUOyI43bXKHm3OfNLfj5ua-nD7cTW6upqWlDIdSzZUVFIUHJpDOjfKzWjBqFPVSUUaFZTMu1ZxakJ7NrZ9J76uKc4Mz7l29T87XZd9in7tMg16EZF1uonP9Mmkp8ny85pDl2b-y5jWlWLEMT_7A134ZuzyEroBzmZXKCNfIxj6l6Lx-i2Fh4pdG0Kso9CoKvYpCb6LIb043hU2ypvX572xIvw8rFJVAkNkdr11wzv1eMxAZ0Pob7QCQzA</recordid><startdate>20090601</startdate><enddate>20090601</enddate><creator>Fujita, S.</creator><creator>Hussein, K.H.</creator><creator>Kitamura, S.</creator><creator>Yamaguchi, T.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7TB</scope><scope>8FD</scope><scope>FR3</scope><scope>JQ2</scope><scope>KR7</scope><scope>L7M</scope><scope>F28</scope></search><sort><creationdate>20090601</creationdate><title>Investigation on IGBT High-Frequency Plasma Extraction Transient Time Oscillation</title><author>Fujita, S. ; Hussein, K.H. ; Kitamura, S. ; Yamaguchi, T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c451t-9d9c7417f05714da9fb3754a94f894547c5b689d4c08f5dcfb8ff2266a1b6fe3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Admittance</topic><topic>Applied sciences</topic><topic>Capacitance</topic><topic>Circuits</topic><topic>Device simulation</topic><topic>Electric currents</topic><topic>Electric potential</topic><topic>Electrical engineering. Electrical power engineering</topic><topic>Electromagnetic interference</topic><topic>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Extraction</topic><topic>IGBT</topic><topic>Insulated gate bipolar transistors</topic><topic>Insulation</topic><topic>Mathematical analysis</topic><topic>negative resistance</topic><topic>Oscillations</topic><topic>Oscillators</topic><topic>Other multijunction devices. Power transistors. Thyristors</topic><topic>Plasma</topic><topic>Plasma devices</topic><topic>Plasma properties</topic><topic>Power electronics, power supplies</topic><topic>Semiconductor diodes</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Simulation</topic><topic>Substrates</topic><topic>Terminals</topic><topic>Transistors</topic><topic>turn- off oscillation</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Fujita, S.</creatorcontrib><creatorcontrib>Hussein, K.H.</creatorcontrib><creatorcontrib>Kitamura, S.</creatorcontrib><creatorcontrib>Yamaguchi, T.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Civil Engineering Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><jtitle>IEEE transactions on power electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Fujita, S.</au><au>Hussein, K.H.</au><au>Kitamura, S.</au><au>Yamaguchi, T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigation on IGBT High-Frequency Plasma Extraction Transient Time Oscillation</atitle><jtitle>IEEE transactions on power electronics</jtitle><stitle>TPEL</stitle><date>2009-06-01</date><risdate>2009</risdate><volume>24</volume><issue>6</issue><spage>1570</spage><epage>1576</epage><pages>1570-1576</pages><issn>0885-8993</issn><eissn>1941-0107</eissn><coden>ITPEE8</coden><abstract>High-frequency voltage oscillations occasionally appear between insulated gate bipolar transistor's (IGBTpsilas) collector and emitter terminals during turn-off operation. Based on the plasma extraction transit-time theory, the turn-off oscillations were investigated experimentally and analytically using real-sized high-voltage IGBT modules. Generating mechanism of the turn-off oscillations was clarified by 2D device simulation. In addition, a practical method for preventing the turn-off oscillations will be proposed in the paper.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TPEL.2009.2015142</doi><tpages>7</tpages></addata></record> |
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| ispartof | IEEE transactions on power electronics, 2009-06, Vol.24 (6), p.1570-1576 |
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| subjects | Admittance Applied sciences Capacitance Circuits Device simulation Electric currents Electric potential Electrical engineering. Electrical power engineering Electromagnetic interference Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Extraction IGBT Insulated gate bipolar transistors Insulation Mathematical analysis negative resistance Oscillations Oscillators Other multijunction devices. Power transistors. Thyristors Plasma Plasma devices Plasma properties Power electronics, power supplies Semiconductor diodes Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Simulation Substrates Terminals Transistors turn- off oscillation Voltage |
| title | Investigation on IGBT High-Frequency Plasma Extraction Transient Time Oscillation |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-14T07%3A39%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Investigation%20on%20IGBT%20High-Frequency%20Plasma%20Extraction%20Transient%20Time%20Oscillation&rft.jtitle=IEEE%20transactions%20on%20power%20electronics&rft.au=Fujita,%20S.&rft.date=2009-06-01&rft.volume=24&rft.issue=6&rft.spage=1570&rft.epage=1576&rft.pages=1570-1576&rft.issn=0885-8993&rft.eissn=1941-0107&rft.coden=ITPEE8&rft_id=info:doi/10.1109/TPEL.2009.2015142&rft_dat=%3Cproquest_RIE%3E875016360%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=206684419&rft_id=info:pmid/&rft_ieee_id=5071724&rfr_iscdi=true |