Investigation on IGBT High-Frequency Plasma Extraction Transient Time Oscillation

High-frequency voltage oscillations occasionally appear between insulated gate bipolar transistor's (IGBTpsilas) collector and emitter terminals during turn-off operation. Based on the plasma extraction transit-time theory, the turn-off oscillations were investigated experimentally and analytic...

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Veröffentlicht in:	IEEE transactions on power electronics 2009-06, Vol.24 (6), p.1570-1576
Hauptverfasser:	Fujita, S., Hussein, K.H., Kitamura, S., Yamaguchi, T.
Format:	Artikel
Sprache:	eng
Schlagworte:	Admittance Applied sciences Capacitance Circuits Device simulation Electric currents Electric potential Electrical engineering. Electrical power engineering Electromagnetic interference Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Extraction IGBT Insulated gate bipolar transistors Insulation Mathematical analysis negative resistance Oscillations Oscillators Other multijunction devices. Power transistors. Thyristors Plasma Plasma devices Plasma properties Power electronics, power supplies Semiconductor diodes Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Simulation Substrates Terminals Transistors turn- off oscillation Voltage
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Beschreibung
Zusammenfassung:	High-frequency voltage oscillations occasionally appear between insulated gate bipolar transistor's (IGBTpsilas) collector and emitter terminals during turn-off operation. Based on the plasma extraction transit-time theory, the turn-off oscillations were investigated experimentally and analytically using real-sized high-voltage IGBT modules. Generating mechanism of the turn-off oscillations was clarified by 2D device simulation. In addition, a practical method for preventing the turn-off oscillations will be proposed in the paper.
ISSN:	0885-8993 1941-0107
DOI:	10.1109/TPEL.2009.2015142