A Backside-Illuminated Image Sensor With 200 000 Pixels Operating at 250 000 Frames per Second

A Backside-Illuminated Image Sensor With 200 000 Pixels Operating at 250 000 Frames per Second

In this paper, a high-speed image sensor with very high sensitivity is developed. The high sensitivity is achieved by introduction of backside illumination and charge-carrier multiplication (CCM). The high frame rate is guaranteed by installing the in situ storage image sensor (ISIS) structure on th...

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Veröffentlicht in:IEEE transactions on electron devices 2009-11, Vol.56 (11), p.2556-2562
Hauptverfasser: Cuong Vo Le, Etoh, T.G., Nguyen, H.D., Dao, V.T.S., Soya, H., Lesser, M., Ouellette, D., van Kuijk, H., Bosiers, J., Ingram, G.
Format: Artikel
Sprache:eng
Schlagworte:
Cameras
Charge coupled devices
Charge-carrier multiplication (CCM)
high sensitivity
high speed
Image sensors
in situ storage image sensor (ISIS)
Logic gates
Pixel
Sensitivity
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Beschreibung
Zusammenfassung:In this paper, a high-speed image sensor with very high sensitivity is developed. The high sensitivity is achieved by introduction of backside illumination and charge-carrier multiplication (CCM). The high frame rate is guaranteed by installing the in situ storage image sensor (ISIS) structure on the front side. A test sensor of the BSI-ISIS has been developed and evaluated. It is shown that an image with a very low signal level embedded under the noise floor is recognizable by activating the CCM.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2009.2030601