Boron Diffusion in Amorphous Germanium

Boron Diffusion in Amorphous Germanium

Rapid boron diffusion in amorphous germanium is observed during solid phase epitaxial regrowth. Boron diffusion in amorphous germanium is seen to increase approximately 4 orders of magnitude relative to amorphous silicon. Weak bonding between germanium and boron coupled with a distinct dopant profil...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Edelman, L A, Jones, K S, Elliman, R G, Rubin, L M
Format: Tagungsbericht
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Rapid boron diffusion in amorphous germanium is observed during solid phase epitaxial regrowth. Boron diffusion in amorphous germanium is seen to increase approximately 4 orders of magnitude relative to amorphous silicon. Weak bonding between germanium and boron coupled with a distinct dopant profile indicate a different diffusion mechanism than that of boron in amorphous silicon.
ISSN:0094-243X
DOI:10.1063/1.3033598