Interconnection effects on the performance of basic subcircuits with single-electron tunneling devices
Interconnection limits seem to be a potential problem to the evolution of the semiconductor industry, especially in the nanoscale. In this work, the electrical performance of basic cells is studied with the help of a simple interconnection model, whose parameters can be changed. Our goal, with this...
Gespeichert in:
| Veröffentlicht in: | Applied surface science 2008-11, Vol.255 (3), p.715-717 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 717 |
|---|---|
| container_issue | 3 |
| container_start_page | 715 |
| container_title | Applied surface science |
| container_volume | 255 |
| creator | Carneiro, V.G.A. Guimarães, J.G. da Costa, J.C. |
| description | Interconnection limits seem to be a potential problem to the evolution of the semiconductor industry, especially in the nanoscale. In this work, the electrical performance of basic cells is studied with the help of a simple interconnection model, whose parameters can be changed. Our goal, with this study, is to determine the interconnection's influence upon the circuit behavior and to establish interconnection-related limits for its functionality. An extrapolation to more complex circuit topologies is also discussed. Finally, the implementation possibilities using new interconnection technologies, like carbon nanotubes, are presented. |
| doi_str_mv | 10.1016/j.apsusc.2008.07.044 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_35977411</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0169433208016024</els_id><sourcerecordid>35977411</sourcerecordid><originalsourceid>FETCH-LOGICAL-c316t-9e91dca0908059c3ac2e1b928b966af27182943f3f62b7cfb86712ccc9d8008c3</originalsourceid><addsrcrecordid>eNp9kMtKxDAUhoMoOF7ewEU3umvNpW2ajSDiDQQ3ug7p6YmTodOOOa3i25thBpeucki-_w_nY-xC8EJwUV-vCrehmaCQnDcF1wUvywO2EI1WeVU15SFbJMzkpVLymJ0QrTgXMr0umH8eJowwDgPCFMYhQ-_TRFkapyVmG4x-jGs3AGajz1pHATKaWwgR5pC47zAtMwrDR4859ikat8k59fXpMuvwKwDSGTvyric835-n7P3h_u3uKX95fXy-u33JQYl6yg0a0YHjhje8MqAcSBStkU1r6tp5qUUjTam88rVsNfi2qbWQAGC6Jq0O6pRd7Xo3cfyckSa7DgTY927AcSarKqN1KUQCyx0IcSSK6O0mhrWLP1Zwu5VqV3Yn1W6lWq5tkppil_t-R-B6H5OYQH9ZyU0lNN_W3-w4TMt-BYyWIGCS2IWYHNluDP9_9AuLq5Fe</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>35977411</pqid></control><display><type>article</type><title>Interconnection effects on the performance of basic subcircuits with single-electron tunneling devices</title><source>Access via ScienceDirect (Elsevier)</source><creator>Carneiro, V.G.A. ; Guimarães, J.G. ; da Costa, J.C.</creator><creatorcontrib>Carneiro, V.G.A. ; Guimarães, J.G. ; da Costa, J.C.</creatorcontrib><description>Interconnection limits seem to be a potential problem to the evolution of the semiconductor industry, especially in the nanoscale. In this work, the electrical performance of basic cells is studied with the help of a simple interconnection model, whose parameters can be changed. Our goal, with this study, is to determine the interconnection's influence upon the circuit behavior and to establish interconnection-related limits for its functionality. An extrapolation to more complex circuit topologies is also discussed. Finally, the implementation possibilities using new interconnection technologies, like carbon nanotubes, are presented.</description><identifier>ISSN: 0169-4332</identifier><identifier>EISSN: 1873-5584</identifier><identifier>DOI: 10.1016/j.apsusc.2008.07.044</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Applied sciences ; Carbon nanotube ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronics ; Exact sciences and technology ; Interconnection ; Metallization, contacts, interconnects; device isolation ; Microelectronic fabrication (materials and surfaces technology) ; Nanoelectronics ; Physics ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Single-electron transistor ; Surface and interface electron states ; Winner-take-all</subject><ispartof>Applied surface science, 2008-11, Vol.255 (3), p.715-717</ispartof><rights>2008 Elsevier B.V.</rights><rights>2009 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c316t-9e91dca0908059c3ac2e1b928b966af27182943f3f62b7cfb86712ccc9d8008c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.apsusc.2008.07.044$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,3550,23930,23931,25140,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=20951701$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Carneiro, V.G.A.</creatorcontrib><creatorcontrib>Guimarães, J.G.</creatorcontrib><creatorcontrib>da Costa, J.C.</creatorcontrib><title>Interconnection effects on the performance of basic subcircuits with single-electron tunneling devices</title><title>Applied surface science</title><description>Interconnection limits seem to be a potential problem to the evolution of the semiconductor industry, especially in the nanoscale. In this work, the electrical performance of basic cells is studied with the help of a simple interconnection model, whose parameters can be changed. Our goal, with this study, is to determine the interconnection's influence upon the circuit behavior and to establish interconnection-related limits for its functionality. An extrapolation to more complex circuit topologies is also discussed. Finally, the implementation possibilities using new interconnection technologies, like carbon nanotubes, are presented.</description><subject>Applied sciences</subject><subject>Carbon nanotube</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Interconnection</subject><subject>Metallization, contacts, interconnects; device isolation</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Nanoelectronics</subject><subject>Physics</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Single-electron transistor</subject><subject>Surface and interface electron states</subject><subject>Winner-take-all</subject><issn>0169-4332</issn><issn>1873-5584</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNp9kMtKxDAUhoMoOF7ewEU3umvNpW2ajSDiDQQ3ug7p6YmTodOOOa3i25thBpeucki-_w_nY-xC8EJwUV-vCrehmaCQnDcF1wUvywO2EI1WeVU15SFbJMzkpVLymJ0QrTgXMr0umH8eJowwDgPCFMYhQ-_TRFkapyVmG4x-jGs3AGajz1pHATKaWwgR5pC47zAtMwrDR4859ikat8k59fXpMuvwKwDSGTvyric835-n7P3h_u3uKX95fXy-u33JQYl6yg0a0YHjhje8MqAcSBStkU1r6tp5qUUjTam88rVsNfi2qbWQAGC6Jq0O6pRd7Xo3cfyckSa7DgTY927AcSarKqN1KUQCyx0IcSSK6O0mhrWLP1Zwu5VqV3Yn1W6lWq5tkppil_t-R-B6H5OYQH9ZyU0lNN_W3-w4TMt-BYyWIGCS2IWYHNluDP9_9AuLq5Fe</recordid><startdate>20081130</startdate><enddate>20081130</enddate><creator>Carneiro, V.G.A.</creator><creator>Guimarães, J.G.</creator><creator>da Costa, J.C.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20081130</creationdate><title>Interconnection effects on the performance of basic subcircuits with single-electron tunneling devices</title><author>Carneiro, V.G.A. ; Guimarães, J.G. ; da Costa, J.C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c316t-9e91dca0908059c3ac2e1b928b966af27182943f3f62b7cfb86712ccc9d8008c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Applied sciences</topic><topic>Carbon nanotube</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Interconnection</topic><topic>Metallization, contacts, interconnects; device isolation</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>Nanoelectronics</topic><topic>Physics</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Single-electron transistor</topic><topic>Surface and interface electron states</topic><topic>Winner-take-all</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Carneiro, V.G.A.</creatorcontrib><creatorcontrib>Guimarães, J.G.</creatorcontrib><creatorcontrib>da Costa, J.C.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied surface science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Carneiro, V.G.A.</au><au>Guimarães, J.G.</au><au>da Costa, J.C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Interconnection effects on the performance of basic subcircuits with single-electron tunneling devices</atitle><jtitle>Applied surface science</jtitle><date>2008-11-30</date><risdate>2008</risdate><volume>255</volume><issue>3</issue><spage>715</spage><epage>717</epage><pages>715-717</pages><issn>0169-4332</issn><eissn>1873-5584</eissn><abstract>Interconnection limits seem to be a potential problem to the evolution of the semiconductor industry, especially in the nanoscale. In this work, the electrical performance of basic cells is studied with the help of a simple interconnection model, whose parameters can be changed. Our goal, with this study, is to determine the interconnection's influence upon the circuit behavior and to establish interconnection-related limits for its functionality. An extrapolation to more complex circuit topologies is also discussed. Finally, the implementation possibilities using new interconnection technologies, like carbon nanotubes, are presented.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.apsusc.2008.07.044</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0169-4332 |
| ispartof | Applied surface science, 2008-11, Vol.255 (3), p.715-717 |
| issn | 0169-4332 1873-5584 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_35977411 |
| source | Access via ScienceDirect (Elsevier) |
| subjects | Applied sciences Carbon nanotube Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronics Exact sciences and technology Interconnection Metallization, contacts, interconnects device isolation Microelectronic fabrication (materials and surfaces technology) Nanoelectronics Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Single-electron transistor Surface and interface electron states Winner-take-all |
| title | Interconnection effects on the performance of basic subcircuits with single-electron tunneling devices |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T07%3A45%3A26IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Interconnection%20effects%20on%20the%20performance%20of%20basic%20subcircuits%20with%20single-electron%20tunneling%20devices&rft.jtitle=Applied%20surface%20science&rft.au=Carneiro,%20V.G.A.&rft.date=2008-11-30&rft.volume=255&rft.issue=3&rft.spage=715&rft.epage=717&rft.pages=715-717&rft.issn=0169-4332&rft.eissn=1873-5584&rft_id=info:doi/10.1016/j.apsusc.2008.07.044&rft_dat=%3Cproquest_cross%3E35977411%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=35977411&rft_id=info:pmid/&rft_els_id=S0169433208016024&rfr_iscdi=true |