Interconnection effects on the performance of basic subcircuits with single-electron tunneling devices

Interconnection limits seem to be a potential problem to the evolution of the semiconductor industry, especially in the nanoscale. In this work, the electrical performance of basic cells is studied with the help of a simple interconnection model, whose parameters can be changed. Our goal, with this...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied surface science 2008-11, Vol.255 (3), p.715-717
Hauptverfasser: Carneiro, V.G.A., Guimarães, J.G., da Costa, J.C.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Interconnection limits seem to be a potential problem to the evolution of the semiconductor industry, especially in the nanoscale. In this work, the electrical performance of basic cells is studied with the help of a simple interconnection model, whose parameters can be changed. Our goal, with this study, is to determine the interconnection's influence upon the circuit behavior and to establish interconnection-related limits for its functionality. An extrapolation to more complex circuit topologies is also discussed. Finally, the implementation possibilities using new interconnection technologies, like carbon nanotubes, are presented.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2008.07.044