Metal–semiconductor interface in extreme temperature conditions

We present an investigation of electrons’ and phonons’ temperatures in the volume of a semiconductor (or metal) sample and at the interface between metal and semiconductor. Two types of mismatch between electrons’ and phonons’ temperatures take place: at metal–semiconductor interfaces and in the vol...

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Veröffentlicht in:Applied surface science 2008-11, Vol.255 (3), p.659-661
Hauptverfasser: Bulat, L.P., Erofeeva, I.A., Vorobiev, Yu.V., González-Hernández, J.
Format: Artikel
Sprache:eng
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Zusammenfassung:We present an investigation of electrons’ and phonons’ temperatures in the volume of a semiconductor (or metal) sample and at the interface between metal and semiconductor. Two types of mismatch between electrons’ and phonons’ temperatures take place: at metal–semiconductor interfaces and in the volume of the sample. The temperature mismatch leads to nonlinear terms in expressions for heat and electricity transport. The nonlinear effects should be taken into consideration in the study of electrical and heat transport in composites and in electronic chips.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2008.07.007