Electronic structure, elasticity and hardness of diborides of zirconium and hafnium: First principles calculations

The explanations for the bonding nature for ZrB 2 and HfB 2 from electronic structure calculations based on different approaches are inconsistent and even contradictory with each other. First principles pseudopotential calculations have been performed to investigate the bonding nature, elastic prope...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Computational materials science 2008-12, Vol.44 (2), p.411-421
Hauptverfasser: Zhang, Xinghong, Luo, Xiaoguang, Han, Jiecai, Li, Jinping, Han, Wenbo
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The explanations for the bonding nature for ZrB 2 and HfB 2 from electronic structure calculations based on different approaches are inconsistent and even contradictory with each other. First principles pseudopotential calculations have been performed to investigate the bonding nature, elastic property and hardness for the two compounds. The nature of chemical bonding for ZrB 2 and HfB 2 can be recognized as a combination of covalent, ionic and metallic bonds from their electronic structures. Density of state, valence charge density and Mulliken population have also been explored to assess the origins of “pseudogap” and charge transfer. The calculated independent elastic constants using finite strain technique generate accurately elastic, bulk and shear modulus for polycrystalline aggregate compared with extrapolated experimental data. The calculated anisotropy factors indicate that ZrB 2 and HfB 2 are largely compression and shear isotropic. While the different bond strengths of boron–boron and boron-metal produces the significant XZ in-plane elastic anisotropy. The model for hardness calculation using Mulliken population is also proved to be effective in hardness prediction for the metal diborides.
ISSN:0927-0256
1879-0801
DOI:10.1016/j.commatsci.2008.04.002