Electric field instabilities in TlGaSe2 crystals

Current-Voltage (I-V) characteristics of TlGaSe2 single crystals have been measured in the direction perpendicular to the layers plane in the temperature region of 80 K-300 K. Samples were placed between two micas and electrical contacts were placed on the surfaces of micas (so called 'contactl...

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Veröffentlicht in:	Solid state sciences 2008-11, Vol.10 (11), p.1666-1670
Hauptverfasser:	SEYIDOV, Mirhasan Yu, SULEYMANOV, Rauf A, SAHIN, Yasin
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Electron density of states and band structure of crystalline solids Electron states Exact sciences and technology Impurity and defect levels Incommensaturate crystals Physics Semi-periodic solids Semiconductor compounds Structure of solids and liquids crystallography
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Zusammenfassung:	Current-Voltage (I-V) characteristics of TlGaSe2 single crystals have been measured in the direction perpendicular to the layers plane in the temperature region of 80 K-300 K. Samples were placed between two micas and electrical contacts were placed on the surfaces of micas (so called 'contactless' measurements). Applied electric field was varied from -1000 V/cm to +1000 V/cm. Current oscillations have been observed only in the temperature region, 145 K-190 K. It is shown that these oscillations are the result of low frequency (0.01 Hz) oscillations of current with time which are due to electric field instabilities occurring within the crystals. The model is discussed for such field instabilities based on the inhomogeneous crystalline structure of the investigated crystals.
ISSN:	1293-2558 1873-3085
DOI:	10.1016/j.solidstatesciences.2008.02.022