Trench formation and lateral damage induced by gallium milling of silicon

Molecular dynamics simulations are performed to model the nanomachining of materials via focused ion beams (FIBs). The goal of this research is to investigate the fundamental dynamics which govern the interaction of FIB with materials which are vital to the semiconductor industry, namely silicon. Sp...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied surface science 2008-12, Vol.255 (4), p.828-830
Hauptverfasser:	Russo, Michael F., Maazouz, Mostafa, Giannuzzi, Lucille A., Chandler, Clive, Utlaut, M., Garrison, Barbara J.
Format:	Artikel
Sprache:	eng
Schlagworte:	FIB Gallium Molecular dynamics Silicon
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!